Effective suppression of surface recombination of AlGaInP light-emitting diodes by sulfur passivation

Ming Jer Jeng*, Yuan Hsiao Chang, Liann Be Chang, Mei Jiau Huang, Jia Chuan Lin

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

12 Scopus citations

Abstract

Sulfur passivation has been shown to be effective for light intensity enhancement of AlGaInP light-emitting diodes (LEDs). The scribed AlGaInP LED die was dipped in (NH4)2Sx to passivate the LED surface. An effective suppression of surface recombination was observed. The leakage current of AlGaInP LEDs decreased from 1.4 x 10-6A (untreated samples) to 7 x 10-7 A ((NH4)2S x-treated ones) at a reverse bias of 10 V. A 5-fold increase in the light intensity of the (NH4)2Sx-treated AlGaInP LEDs was observed relative to that of the untreated LEDs.

Original languageEnglish
Pages (from-to)L291-L293
JournalJapanese Journal of Applied Physics
Volume46
Issue number12-16
DOIs
StatePublished - 13 04 2007
Externally publishedYes

Keywords

  • (NH)S
  • AlGaInP
  • Light intensity
  • Light-emitting diode (LED)
  • Sulfur passivation

Fingerprint

Dive into the research topics of 'Effective suppression of surface recombination of AlGaInP light-emitting diodes by sulfur passivation'. Together they form a unique fingerprint.

Cite this