Abstract
Sulfur passivation has been shown to be effective for light intensity enhancement of AlGaInP light-emitting diodes (LEDs). The scribed AlGaInP LED die was dipped in (NH4)2Sx to passivate the LED surface. An effective suppression of surface recombination was observed. The leakage current of AlGaInP LEDs decreased from 1.4 x 10-6A (untreated samples) to 7 x 10-7 A ((NH4)2S x-treated ones) at a reverse bias of 10 V. A 5-fold increase in the light intensity of the (NH4)2Sx-treated AlGaInP LEDs was observed relative to that of the untreated LEDs.
Original language | English |
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Pages (from-to) | L291-L293 |
Journal | Japanese Journal of Applied Physics |
Volume | 46 |
Issue number | 12-16 |
DOIs | |
State | Published - 13 04 2007 |
Externally published | Yes |
Keywords
- (NH)S
- AlGaInP
- Light intensity
- Light-emitting diode (LED)
- Sulfur passivation