Effective treatment on AlGaN/GaN MSM-2DEG varactor with (NH 4)2S/P2S5 Solution

Y. C. Ferng, L. B. Chang, A. Das, C. Y. Chen, C. C. Lin

Research output: Contribution to journalJournal Article peer-review

6 Scopus citations


The effect of surface passivation using (NH4)2 S and (NH4)2 S/ P2S5 on a AlGaN/GaN-based metal-semiconductor-metal diode above a two-dimensional electron gas (MSM-2DEG) varactor was investigated. The surface property, capacitance ratio (Cmax / Cmin), and leakage current of the prepared samples were studied before and after treatments using X-ray photoelectron spectroscopy and capacitance-voltage and current-voltage analyses. It showed that the (NH4)2 S/ P2S5 -treated sample had the most excellent surface state and Cmax / Cmin and the least leakage current because of either reduced native oxide or deposited phosphorus compounds only provided by (NH4) 2 S/ P2S5 and sulfide upon the surface, also validated by having the highest sheet carrier density. Hence, these promising results promote further potential for varactor applications.

Original languageEnglish
Pages (from-to)H350-H353
JournalElectrochemical and Solid-State Letters
Issue number10
StatePublished - 2010


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