Effects of a HfMoN metal gate and self-aligned fluorine-ion implantation on the negative-bias temperature instability of pMOSFETs with Gd2O 3 gate dielectrics

Jer Chyi Wang; Hsing Kan Peng; Chao Sung Lai; Pai Chi Chou; Min Jer Lee

doi:10.1109/LED.2011.2157300

Effects of a HfMoN metal gate and self-aligned fluorine-ion implantation on the negative-bias temperature instability of pMOSFETs with Gd₂O ₃ gate dielectrics

Jer Chyi Wang^*, Hsing Kan Peng, Chao Sung Lai, Pai Chi Chou, Min Jer Lee

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

Abstract

The effects of self-aligned fluorine-ion implantation on the negative-bias temperature instability (NBTI) of p-channel metal-oxide-semiconductor field-effect transistors with HfMoN metal gates and Gd₂O₃ gate dielectrics were investigated. The threshold voltage V_th can be adjusted from-0.8 to-0.02 V by increasing the nitrogen concentration in the HfMoN metal gates. However, this adjustment degrades the NBTI, and consequently, the V_th shifts are increased by 140 and 500 mV for samples with low (0%) and high (12%) nitrogen concentration, respectively, in the HfMoN metal gates. This degradation of NBTI was improved by fluorine incorporation.

Original language	English
Article number	5928382
Pages (from-to)	1017-1019
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	8
DOIs	https://doi.org/10.1109/LED.2011.2157300
State	Published - 08 2011

Keywords

Fluorine
high-κ
metal gate
negative-bias temperature instability (NBTI)
nitrogen

Access to Document

10.1109/LED.2011.2157300

Cite this

@article{dea6eb65fcc646b9a71f327cfc54dcc2,

title = "Effects of a HfMoN metal gate and self-aligned fluorine-ion implantation on the negative-bias temperature instability of pMOSFETs with Gd2O 3 gate dielectrics",

abstract = "The effects of self-aligned fluorine-ion implantation on the negative-bias temperature instability (NBTI) of p-channel metal-oxide-semiconductor field-effect transistors with HfMoN metal gates and Gd2O3 gate dielectrics were investigated. The threshold voltage Vth can be adjusted from-0.8 to-0.02 V by increasing the nitrogen concentration in the HfMoN metal gates. However, this adjustment degrades the NBTI, and consequently, the Vth shifts are increased by 140 and 500 mV for samples with low (0%) and high (12%) nitrogen concentration, respectively, in the HfMoN metal gates. This degradation of NBTI was improved by fluorine incorporation.",

keywords = "Fluorine, high-κ, metal gate, negative-bias temperature instability (NBTI), nitrogen",

author = "Wang, {Jer Chyi} and Peng, {Hsing Kan} and Lai, {Chao Sung} and Chou, {Pai Chi} and Lee, {Min Jer}",

year = "2011",

month = aug,

doi = "10.1109/LED.2011.2157300",

language = "英语",

volume = "32",

pages = "1017--1019",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

Effects of a HfMoN metal gate and self-aligned fluorine-ion implantation on the negative-bias temperature instability of pMOSFETs with Gd₂O ₃ gate dielectrics. / Wang, Jer Chyi; Peng, Hsing Kan; Lai, Chao Sung et al.
In: IEEE Electron Device Letters, Vol. 32, No. 8, 5928382, 08.2011, p. 1017-1019.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - Effects of a HfMoN metal gate and self-aligned fluorine-ion implantation on the negative-bias temperature instability of pMOSFETs with Gd2O 3 gate dielectrics

AU - Wang, Jer Chyi

AU - Peng, Hsing Kan

AU - Lai, Chao Sung

AU - Chou, Pai Chi

AU - Lee, Min Jer

PY - 2011/8

Y1 - 2011/8

N2 - The effects of self-aligned fluorine-ion implantation on the negative-bias temperature instability (NBTI) of p-channel metal-oxide-semiconductor field-effect transistors with HfMoN metal gates and Gd2O3 gate dielectrics were investigated. The threshold voltage Vth can be adjusted from-0.8 to-0.02 V by increasing the nitrogen concentration in the HfMoN metal gates. However, this adjustment degrades the NBTI, and consequently, the Vth shifts are increased by 140 and 500 mV for samples with low (0%) and high (12%) nitrogen concentration, respectively, in the HfMoN metal gates. This degradation of NBTI was improved by fluorine incorporation.

AB - The effects of self-aligned fluorine-ion implantation on the negative-bias temperature instability (NBTI) of p-channel metal-oxide-semiconductor field-effect transistors with HfMoN metal gates and Gd2O3 gate dielectrics were investigated. The threshold voltage Vth can be adjusted from-0.8 to-0.02 V by increasing the nitrogen concentration in the HfMoN metal gates. However, this adjustment degrades the NBTI, and consequently, the Vth shifts are increased by 140 and 500 mV for samples with low (0%) and high (12%) nitrogen concentration, respectively, in the HfMoN metal gates. This degradation of NBTI was improved by fluorine incorporation.

KW - Fluorine

KW - high-κ

KW - metal gate

KW - negative-bias temperature instability (NBTI)

KW - nitrogen

UR - http://www.scopus.com/inward/record.url?scp=79960897003&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2157300

DO - 10.1109/LED.2011.2157300

M3 - 文章

AN - SCOPUS:79960897003

SN - 0741-3106

VL - 32

SP - 1017

EP - 1019

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

M1 - 5928382

ER -

Effects of a HfMoN metal gate and self-aligned fluorine-ion implantation on the negative-bias temperature instability of pMOSFETs with Gd₂O ₃ gate dielectrics

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this