Effects of annealing on CeO2-based flash memories

Chyuan Haur Kao; Hsiang Chen; Su Zhien Chen; Sheng Hao Hung; Chian You Chen; Yun Yang He; Shang Ren Lin; Kun Min Hsieh; Min Han Lin

doi:10.1016/j.vacuum.2015.01.024

Effects of annealing on CeO₂-based flash memories

Chyuan Haur Kao, Hsiang Chen^*, Su Zhien Chen, Sheng Hao Hung, Chian You Chen, Yun Yang He, Shang Ren Lin, Kun Min Hsieh, Min Han Lin

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

6 Scopus citations

Abstract

In this study, CeO₂ was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. This trapping layer underwent annealing to enhance memory performance. Multiple material analyses indicate that annealing enables enhanced crystallization and suppresses silicate formation. MOHOS-type flash memory devices incorporating a CeO₂ charge trapping layer annealed at 950°C exhibited a large memory window of 4.7 V, as well as a fast program and erase speed. Our research indicates that MOHOS-type memory devices utilizing CeO₂ show great promise for future industrial flash memory applications.

Original language	English
Pages (from-to)	69-73
Number of pages	5
Journal	Vacuum
Volume	118
DOIs	https://doi.org/10.1016/j.vacuum.2015.01.024
State	Published - 01 08 2015

Bibliographical note

Publisher Copyright:
© 2015 Elsevier Ltd. All rights reserved.

Keywords

Annealing
CeO
Crystallization
Flash memory
Memory window

Access to Document

10.1016/j.vacuum.2015.01.024

Cite this

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title = "Effects of annealing on CeO2-based flash memories",

abstract = "In this study, CeO2 was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. This trapping layer underwent annealing to enhance memory performance. Multiple material analyses indicate that annealing enables enhanced crystallization and suppresses silicate formation. MOHOS-type flash memory devices incorporating a CeO2 charge trapping layer annealed at 950°C exhibited a large memory window of 4.7 V, as well as a fast program and erase speed. Our research indicates that MOHOS-type memory devices utilizing CeO2 show great promise for future industrial flash memory applications.",

keywords = "Annealing, CeO, Crystallization, Flash memory, Memory window",

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AU - Kao, Chyuan Haur

AU - Chen, Hsiang

AU - Chen, Su Zhien

AU - Hung, Sheng Hao

AU - Chen, Chian You

AU - He, Yun Yang

AU - Lin, Shang Ren

AU - Hsieh, Kun Min

AU - Lin, Min Han

PY - 2015/8/1

Y1 - 2015/8/1

N2 - In this study, CeO2 was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. This trapping layer underwent annealing to enhance memory performance. Multiple material analyses indicate that annealing enables enhanced crystallization and suppresses silicate formation. MOHOS-type flash memory devices incorporating a CeO2 charge trapping layer annealed at 950°C exhibited a large memory window of 4.7 V, as well as a fast program and erase speed. Our research indicates that MOHOS-type memory devices utilizing CeO2 show great promise for future industrial flash memory applications.

AB - In this study, CeO2 was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. This trapping layer underwent annealing to enhance memory performance. Multiple material analyses indicate that annealing enables enhanced crystallization and suppresses silicate formation. MOHOS-type flash memory devices incorporating a CeO2 charge trapping layer annealed at 950°C exhibited a large memory window of 4.7 V, as well as a fast program and erase speed. Our research indicates that MOHOS-type memory devices utilizing CeO2 show great promise for future industrial flash memory applications.

KW - Annealing

KW - CeO

KW - Crystallization

KW - Flash memory

KW - Memory window

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