Effects of annealing on characteristics of Cu2ZnSnSe4/CH3NH3PbI3/ZnS/IZO nanostructures for enhanced photovoltaic solar cells

Chzu Chiang Tseng; Gwomei Wu; Liann Be Chang; Ming Jer Jeng; Wu Shiung Feng; Dave W. Chen; Lung Chien Chen; Kuan Lin Lee

doi:10.3390/nano10030521

Effects of annealing on characteristics of Cu₂ZnSnSe₄/CH₃NH₃PbI₃/ZnS/IZO nanostructures for enhanced photovoltaic solar cells

Chzu Chiang Tseng, Gwomei Wu^*, Liann Be Chang, Ming Jer Jeng, Wu Shiung Feng, Dave W. Chen, Lung Chien Chen, Kuan Lin Lee

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

16 Scopus citations

Abstract

This paper presents new photovoltaic solar cells with Cu₂ZnSnSe₄ /CH₃NH₃PbI₃(MAPbI₃)/ ZnS/IZO/Ag nanostructures on bi-layer Mo/FTO (fluorine-doped tin oxide) glasssubstrates. The hole-transporting layer, active absorber layer, electron-transporting layer, transparent-conductive oxide layer, and top electrode-metal contact layer, were made of Cu₂ZnSnSe₄, MAPbI₃ perovskite, zincsulfide, indium-doped zinc oxide, and silver, respectively. The active absorber MAPbI₃ perovskite film was deposited on Cu₂ZnSnSe₄ hole-transporting layer that has been annealed at different temperatures. TheseCu₂ZnSnSe₄ filmsexhibitedthe morphology with increased crystal grain sizesand reduced pinholes, following the increased annealing temperature. When the perovskitefilm thickness was designed at 700 nm, the Cu₂ZnSnSe₄ hole-transporting layer was 160 nm, and the IZO (indium-zinc oxide) at 100 nm, and annealed at 650^◦C, the experimental results showed significant improvements in the solar cell characteristics. The open-circuit voltage was increased to 1.1 V, the short-circuit current was improved to 20.8 mA/cm², and the device fill factor was elevated to 76.3%. In addition, the device power-conversion efficiency has been improved to 17.4%. The output power P_max was as good as 1.74 mW and the device series-resistance was 17.1 Ω.

Original language	English
Article number	521
Journal	Nanomaterials
Volume	10
Issue number	3
DOIs	https://doi.org/10.3390/nano10030521
State	Published - 03 2020

Bibliographical note

Publisher Copyright:
© 2020 by the authors. Licensee MDPI, Basel, Switzerland.

Keywords

CZTSe
Hole-transporting material
IZO
Magnetron sputtering
Perovskite

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.3390/nano10030521

Cite this

@article{3743e6c806874c7c835d82eef39a3199,

title = "Effects of annealing on characteristics of Cu2ZnSnSe4/CH3NH3PbI3/ZnS/IZO nanostructures for enhanced photovoltaic solar cells",

abstract = "This paper presents new photovoltaic solar cells with Cu2ZnSnSe4 /CH3NH3PbI3(MAPbI3)/ ZnS/IZO/Ag nanostructures on bi-layer Mo/FTO (fluorine-doped tin oxide) glasssubstrates. The hole-transporting layer, active absorber layer, electron-transporting layer, transparent-conductive oxide layer, and top electrode-metal contact layer, were made of Cu2ZnSnSe4, MAPbI3 perovskite, zincsulfide, indium-doped zinc oxide, and silver, respectively. The active absorber MAPbI3 perovskite film was deposited on Cu2ZnSnSe4 hole-transporting layer that has been annealed at different temperatures. TheseCu2ZnSnSe4 filmsexhibitedthe morphology with increased crystal grain sizesand reduced pinholes, following the increased annealing temperature. When the perovskitefilm thickness was designed at 700 nm, the Cu2ZnSnSe4 hole-transporting layer was 160 nm, and the IZO (indium-zinc oxide) at 100 nm, and annealed at 650◦C, the experimental results showed significant improvements in the solar cell characteristics. The open-circuit voltage was increased to 1.1 V, the short-circuit current was improved to 20.8 mA/cm2, and the device fill factor was elevated to 76.3\%. In addition, the device power-conversion efficiency has been improved to 17.4\%. The output power Pmax was as good as 1.74 mW and the device series-resistance was 17.1 Ω.",

keywords = "CZTSe, Hole-transporting material, IZO, Magnetron sputtering, Perovskite",

author = "Tseng, \{Chzu Chiang\} and Gwomei Wu and Chang, \{Liann Be\} and Jeng, \{Ming Jer\} and Feng, \{Wu Shiung\} and Chen, \{Dave W.\} and Chen, \{Lung Chien\} and Lee, \{Kuan Lin\}",

note = "Publisher Copyright: {\textcopyright} 2020 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2020",

month = mar,

doi = "10.3390/nano10030521",

language = "英语",

volume = "10",

journal = "Nanomaterials",

issn = "2079-4991",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "3",

}

TY - JOUR

T1 - Effects of annealing on characteristics of Cu2ZnSnSe4/CH3NH3PbI3/ZnS/IZO nanostructures for enhanced photovoltaic solar cells

AU - Tseng, Chzu Chiang

AU - Wu, Gwomei

AU - Chang, Liann Be

AU - Jeng, Ming Jer

AU - Feng, Wu Shiung

AU - Chen, Dave W.

AU - Chen, Lung Chien

AU - Lee, Kuan Lin

PY - 2020/3

Y1 - 2020/3

N2 - This paper presents new photovoltaic solar cells with Cu2ZnSnSe4 /CH3NH3PbI3(MAPbI3)/ ZnS/IZO/Ag nanostructures on bi-layer Mo/FTO (fluorine-doped tin oxide) glasssubstrates. The hole-transporting layer, active absorber layer, electron-transporting layer, transparent-conductive oxide layer, and top electrode-metal contact layer, were made of Cu2ZnSnSe4, MAPbI3 perovskite, zincsulfide, indium-doped zinc oxide, and silver, respectively. The active absorber MAPbI3 perovskite film was deposited on Cu2ZnSnSe4 hole-transporting layer that has been annealed at different temperatures. TheseCu2ZnSnSe4 filmsexhibitedthe morphology with increased crystal grain sizesand reduced pinholes, following the increased annealing temperature. When the perovskitefilm thickness was designed at 700 nm, the Cu2ZnSnSe4 hole-transporting layer was 160 nm, and the IZO (indium-zinc oxide) at 100 nm, and annealed at 650◦C, the experimental results showed significant improvements in the solar cell characteristics. The open-circuit voltage was increased to 1.1 V, the short-circuit current was improved to 20.8 mA/cm2, and the device fill factor was elevated to 76.3%. In addition, the device power-conversion efficiency has been improved to 17.4%. The output power Pmax was as good as 1.74 mW and the device series-resistance was 17.1 Ω.

AB - This paper presents new photovoltaic solar cells with Cu2ZnSnSe4 /CH3NH3PbI3(MAPbI3)/ ZnS/IZO/Ag nanostructures on bi-layer Mo/FTO (fluorine-doped tin oxide) glasssubstrates. The hole-transporting layer, active absorber layer, electron-transporting layer, transparent-conductive oxide layer, and top electrode-metal contact layer, were made of Cu2ZnSnSe4, MAPbI3 perovskite, zincsulfide, indium-doped zinc oxide, and silver, respectively. The active absorber MAPbI3 perovskite film was deposited on Cu2ZnSnSe4 hole-transporting layer that has been annealed at different temperatures. TheseCu2ZnSnSe4 filmsexhibitedthe morphology with increased crystal grain sizesand reduced pinholes, following the increased annealing temperature. When the perovskitefilm thickness was designed at 700 nm, the Cu2ZnSnSe4 hole-transporting layer was 160 nm, and the IZO (indium-zinc oxide) at 100 nm, and annealed at 650◦C, the experimental results showed significant improvements in the solar cell characteristics. The open-circuit voltage was increased to 1.1 V, the short-circuit current was improved to 20.8 mA/cm2, and the device fill factor was elevated to 76.3%. In addition, the device power-conversion efficiency has been improved to 17.4%. The output power Pmax was as good as 1.74 mW and the device series-resistance was 17.1 Ω.

KW - CZTSe

KW - Hole-transporting material

KW - IZO

KW - Magnetron sputtering

KW - Perovskite

UR - https://www.scopus.com/pages/publications/85081660271

U2 - 10.3390/nano10030521

DO - 10.3390/nano10030521

M3 - 文章

AN - SCOPUS:85081660271

SN - 2079-4991

VL - 10

JO - Nanomaterials

JF - Nanomaterials

IS - 3

M1 - 521

ER -