Effects of CF4 plasma treatment on the electrical characteristics of poly-silicon TFTs using a Tb2O3 gate dielectric

Tung Ming Pan; Zhi Hong Li; Chih Kang Deng

doi:10.1109/TED.2010.2047904

Effects of CF₄ plasma treatment on the electrical characteristics of poly-silicon TFTs using a Tb₂O₃ gate dielectric

Tung Ming Pan^*, Zhi Hong Li, Chih Kang Deng

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

12 Scopus citations

Abstract

In this paper, we developed high-k Tb₂O₃ poly-Si thin-film transistors (TFTs) using different FTb₄ plasma power treatments. The high- k Tb₂O₃ poly-Si TFT device with a 20-W plasma power exhibited better electrical characteristics in terms of a highly effective carrier mobility, a high-driving current, a low-threshold voltage, a small subthreshold slope, and a high ITb_ON/I_OFF current ratio. This result is attributed to the incorporation of fluorine atoms into the Tb₂O₃/poly-Si interface to reduce the trap-state density. The high- k Tb₂O₃ poly-Si TFT prepared under a 20-W CF₄ plasma power also enhanced electrical reliabilities, including hot carrier and positive bias temperature instability. All of these results suggest that the CF₄ plasma-treated poly-Si Tb ₂O₃ TFT is a good candidate for high-performance low-temperature poly-Si TFTs.

Original language	English
Article number	5464298
Pages (from-to)	1519-1526
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	7
DOIs	https://doi.org/10.1109/TED.2010.2047904
State	Published - 07 2010

Keywords

CFplasma power
TbO
high-k
interface trap density
thin-film transistors (TFTs)

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10.1109/TED.2010.2047904

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title = "Effects of CF4 plasma treatment on the electrical characteristics of poly-silicon TFTs using a Tb2O3 gate dielectric",

abstract = "In this paper, we developed high-k Tb2O3 poly-Si thin-film transistors (TFTs) using different FTb4 plasma power treatments. The high- k Tb2O3 poly-Si TFT device with a 20-W plasma power exhibited better electrical characteristics in terms of a highly effective carrier mobility, a high-driving current, a low-threshold voltage, a small subthreshold slope, and a high ITbON/IOFF current ratio. This result is attributed to the incorporation of fluorine atoms into the Tb2O3/poly-Si interface to reduce the trap-state density. The high- k Tb2O3 poly-Si TFT prepared under a 20-W CF4 plasma power also enhanced electrical reliabilities, including hot carrier and positive bias temperature instability. All of these results suggest that the CF4 plasma-treated poly-Si Tb 2O3 TFT is a good candidate for high-performance low-temperature poly-Si TFTs.",

keywords = "CFplasma power, TbO, high-k, interface trap density, thin-film transistors (TFTs)",

author = "Pan, {Tung Ming} and Li, {Zhi Hong} and Deng, {Chih Kang}",

year = "2010",

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doi = "10.1109/TED.2010.2047904",

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AU - Pan, Tung Ming

AU - Li, Zhi Hong

AU - Deng, Chih Kang

PY - 2010/7

Y1 - 2010/7

N2 - In this paper, we developed high-k Tb2O3 poly-Si thin-film transistors (TFTs) using different FTb4 plasma power treatments. The high- k Tb2O3 poly-Si TFT device with a 20-W plasma power exhibited better electrical characteristics in terms of a highly effective carrier mobility, a high-driving current, a low-threshold voltage, a small subthreshold slope, and a high ITbON/IOFF current ratio. This result is attributed to the incorporation of fluorine atoms into the Tb2O3/poly-Si interface to reduce the trap-state density. The high- k Tb2O3 poly-Si TFT prepared under a 20-W CF4 plasma power also enhanced electrical reliabilities, including hot carrier and positive bias temperature instability. All of these results suggest that the CF4 plasma-treated poly-Si Tb 2O3 TFT is a good candidate for high-performance low-temperature poly-Si TFTs.

AB - In this paper, we developed high-k Tb2O3 poly-Si thin-film transistors (TFTs) using different FTb4 plasma power treatments. The high- k Tb2O3 poly-Si TFT device with a 20-W plasma power exhibited better electrical characteristics in terms of a highly effective carrier mobility, a high-driving current, a low-threshold voltage, a small subthreshold slope, and a high ITbON/IOFF current ratio. This result is attributed to the incorporation of fluorine atoms into the Tb2O3/poly-Si interface to reduce the trap-state density. The high- k Tb2O3 poly-Si TFT prepared under a 20-W CF4 plasma power also enhanced electrical reliabilities, including hot carrier and positive bias temperature instability. All of these results suggest that the CF4 plasma-treated poly-Si Tb 2O3 TFT is a good candidate for high-performance low-temperature poly-Si TFTs.

KW - CFplasma power

KW - TbO

KW - high-k

KW - interface trap density

KW - thin-film transistors (TFTs)

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JO - IEEE Transactions on Electron Devices

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ER -

Effects of CF₄ plasma treatment on the electrical characteristics of poly-silicon TFTs using a Tb₂O₃ gate dielectric

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