Effects of copper and indium ratio on the performance of the CuInSe 2 solar cells

Ming Chun Lee; Jui Fu Yang; Ming Yang Hsieh; Shou Yi Kuo

doi:10.1109/ISNE.2014.6839346

Effects of copper and indium ratio on the performance of the CuInSe ₂ solar cells

Ming Chun Lee
, Jui Fu Yang
, Ming Yang Hsieh
, Shou Yi Kuo^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Copper Indium Diselenide (CuInSe₂) thin films of different Cu-In layers were prepared using sequential elemental evaporation technique. Respectively, the selenization within a close spaced graphite box resulting in quality CuInSe₂ (CIS) films was developed. The comparative analysis of crystalline properties evaluated by energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), X-ray diffraction (XRD), Raman scattering measurements is presented here. A photovoltaic efficiency of the heterojunction is compared with that the structure of SLG/Mo/CuInSe ₂/CdS/ZnO/AZO/Al photovoltaic devices. Introducing In-excess CIS film increase the efficiency to 4.62%, because of the current density and open circuit voltage were improved.

Original language	English
Title of host publication	2014 International Symposium on Next-Generation Electronics, ISNE 2014
Publisher	IEEE Computer Society
ISBN (Print)	9781479947805
DOIs	https://doi.org/10.1109/ISNE.2014.6839346
State	Published - 2014
Event	3rd International Symposium on Next-Generation Electronics, ISNE 2014 - Taoyuan, Taiwan Duration: 07 05 2014 → 10 05 2014

Publication series

Name	2014 International Symposium on Next-Generation Electronics, ISNE 2014

Conference

Conference	3rd International Symposium on Next-Generation Electronics, ISNE 2014
Country/Territory	Taiwan
City	Taoyuan
Period	07/05/14 → 10/05/14

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Evaporation

Access to Document

10.1109/ISNE.2014.6839346

Cite this

Lee, M. C., Yang, J. F., Hsieh, M. Y., & Kuo, S. Y. (2014). Effects of copper and indium ratio on the performance of the CuInSe ₂ solar cells. In 2014 International Symposium on Next-Generation Electronics, ISNE 2014 Article 6839346 (2014 International Symposium on Next-Generation Electronics, ISNE 2014). IEEE Computer Society. https://doi.org/10.1109/ISNE.2014.6839346

@inproceedings{af6cda8849c84aacb680fadfdfd5caaf,

title = "Effects of copper and indium ratio on the performance of the CuInSe 2 solar cells",

abstract = "Copper Indium Diselenide (CuInSe2) thin films of different Cu-In layers were prepared using sequential elemental evaporation technique. Respectively, the selenization within a close spaced graphite box resulting in quality CuInSe2 (CIS) films was developed. The comparative analysis of crystalline properties evaluated by energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), X-ray diffraction (XRD), Raman scattering measurements is presented here. A photovoltaic efficiency of the heterojunction is compared with that the structure of SLG/Mo/CuInSe 2/CdS/ZnO/AZO/Al photovoltaic devices. Introducing In-excess CIS film increase the efficiency to 4.62\%, because of the current density and open circuit voltage were improved.",

keywords = "Evaporation",

author = "Lee, \{Ming Chun\} and Yang, \{Jui Fu\} and Hsieh, \{Ming Yang\} and Kuo, \{Shou Yi\}",

year = "2014",

doi = "10.1109/ISNE.2014.6839346",

language = "英语",

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publisher = "IEEE Computer Society",

booktitle = "2014 International Symposium on Next-Generation Electronics, ISNE 2014",

address = "美国",

note = "3rd International Symposium on Next-Generation Electronics, ISNE 2014 ; Conference date: 07-05-2014 Through 10-05-2014",

}

Lee, MC, Yang, JF, Hsieh, MY & Kuo, SY 2014, Effects of copper and indium ratio on the performance of the CuInSe ₂ solar cells. in 2014 International Symposium on Next-Generation Electronics, ISNE 2014., 6839346, 2014 International Symposium on Next-Generation Electronics, ISNE 2014, IEEE Computer Society, 3rd International Symposium on Next-Generation Electronics, ISNE 2014, Taoyuan, Taiwan, 07/05/14. https://doi.org/10.1109/ISNE.2014.6839346

Effects of copper and indium ratio on the performance of the CuInSe ₂ solar cells. / Lee, Ming Chun; Yang, Jui Fu; Hsieh, Ming Yang et al.
2014 International Symposium on Next-Generation Electronics, ISNE 2014. IEEE Computer Society, 2014. 6839346 (2014 International Symposium on Next-Generation Electronics, ISNE 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lee, Ming Chun

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N2 - Copper Indium Diselenide (CuInSe2) thin films of different Cu-In layers were prepared using sequential elemental evaporation technique. Respectively, the selenization within a close spaced graphite box resulting in quality CuInSe2 (CIS) films was developed. The comparative analysis of crystalline properties evaluated by energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), X-ray diffraction (XRD), Raman scattering measurements is presented here. A photovoltaic efficiency of the heterojunction is compared with that the structure of SLG/Mo/CuInSe 2/CdS/ZnO/AZO/Al photovoltaic devices. Introducing In-excess CIS film increase the efficiency to 4.62%, because of the current density and open circuit voltage were improved.

AB - Copper Indium Diselenide (CuInSe2) thin films of different Cu-In layers were prepared using sequential elemental evaporation technique. Respectively, the selenization within a close spaced graphite box resulting in quality CuInSe2 (CIS) films was developed. The comparative analysis of crystalline properties evaluated by energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), X-ray diffraction (XRD), Raman scattering measurements is presented here. A photovoltaic efficiency of the heterojunction is compared with that the structure of SLG/Mo/CuInSe 2/CdS/ZnO/AZO/Al photovoltaic devices. Introducing In-excess CIS film increase the efficiency to 4.62%, because of the current density and open circuit voltage were improved.

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