Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films

Shiu Jen Liu; Shih Hao Su; Hau Wei Fang; Jang Hsing Hsieh; Jenh Yih Juang

doi:10.1016/j.apsusc.2011.06.129

Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films

Shiu Jen Liu^*
, Shih Hao Su
, Hau Wei Fang
, Jang Hsing Hsieh
, Jenh Yih Juang

^*Corresponding author for this work

National Taiwan Normal University
National Yang Ming Chiao Tung University
Ming Chi University of Technology

Research output: Contribution to journal › Journal Article › peer-review

10 Scopus citations

Abstract

Amorphous thin films of InGaZnO ₄ (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism.

Original language	English
Pages (from-to)	10018-10021
Number of pages	4
Journal	Applied Surface Science
Volume	257
Issue number	23
DOIs	https://doi.org/10.1016/j.apsusc.2011.06.129
State	Published - 15 09 2011
Externally published	Yes

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This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Amorphous transparent conducting oxide
Cr doping
Diluted magnetic semiconductor
Indium gallium zinc oxide films

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10.1016/j.apsusc.2011.06.129

Cite this

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title = "Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films",

abstract = " Amorphous thin films of InGaZnO 4 (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism.",

keywords = "Amorphous transparent conducting oxide, Cr doping, Diluted magnetic semiconductor, Indium gallium zinc oxide films",

author = "Liu, \{Shiu Jen\} and Su, \{Shih Hao\} and Fang, \{Hau Wei\} and Hsieh, \{Jang Hsing\} and Juang, \{Jenh Yih\}",

year = "2011",

month = sep,

day = "15",

doi = "10.1016/j.apsusc.2011.06.129",

language = "英语",

volume = "257",

pages = "10018--10021",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "23",

}

TY - JOUR

T1 - Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films

AU - Liu, Shiu Jen

AU - Su, Shih Hao

AU - Fang, Hau Wei

AU - Hsieh, Jang Hsing

AU - Juang, Jenh Yih

PY - 2011/9/15

Y1 - 2011/9/15

N2 - Amorphous thin films of InGaZnO 4 (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism.

AB - Amorphous thin films of InGaZnO 4 (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism.

KW - Amorphous transparent conducting oxide

KW - Cr doping

KW - Diluted magnetic semiconductor

KW - Indium gallium zinc oxide films

UR - https://www.scopus.com/pages/publications/80051791835

U2 - 10.1016/j.apsusc.2011.06.129

DO - 10.1016/j.apsusc.2011.06.129

M3 - 文章

AN - SCOPUS:80051791835

SN - 0169-4332

VL - 257

SP - 10018

EP - 10021

JO - Applied Surface Science

JF - Applied Surface Science

IS - 23

ER -

Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films

Abstract

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Keywords

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