Effects of fabrication conditions on the characteristics of sputter-deposited amorphous indium gallium zinc oxide thin film resistive random access memory devices

Hsin-Chun Lu

Effects of fabrication conditions on the characteristics of sputter-deposited amorphous indium gallium zinc oxide thin film resistive random access memory devices

Hsin-Chun Lu

Department of Chemical and Materials Engineering

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2024
Event	IUMRS-ICEM 2024 - Hong Kong, China Duration: 16 05 2024 → 20 05 2024

Conference

Conference	IUMRS-ICEM 2024
Period	16/05/24 → 20/05/24

Cite this

@conference{2722628632fa467c9aac25c9a23434f5,

title = "Effects of fabrication conditions on the characteristics of sputter-deposited amorphous indium gallium zinc oxide thin film resistive random access memory devices",

author = "Hsin-Chun Lu",

year = "2024",

language = "American English",

note = "IUMRS-ICEM 2024 ; Conference date: 16-05-2024 Through 20-05-2024",

}