Effects of HfO2 Trapping Layer in Gd2O3 Nanocrystal Nonvolatile Memory with Multi-tunneling Layers

Chia-Hsin Chen; Chin-Hsiang Liao; Chih-Ting Lin; Jer-Chyi Wang; Po-Wei Huang; Chao-Sung Lai

Effects of HfO2 Trapping Layer in Gd2O3 Nanocrystal Nonvolatile Memory with Multi-tunneling Layers

Chia-Hsin Chen
, Chin-Hsiang Liao
, Chih-Ting Lin
, Jer-Chyi Wang
, Po-Wei Huang
, Chao-Sung Lai

Department of Electronic Engineering

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2011
Event	2011 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2011) - Tianjing, China Duration: 17 11 2011 → 18 11 2011

Conference

Conference	2011 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2011)
Period	17/11/11 → 18/11/11

Cite this

@conference{4eebfad05a1a445ba34d1a2e7ed4e13e,

title = "Effects of HfO2 Trapping Layer in Gd2O3 Nanocrystal Nonvolatile Memory with Multi-tunneling Layers",

author = "Chia-Hsin Chen and Chin-Hsiang Liao and Chih-Ting Lin and Jer-Chyi Wang and Po-Wei Huang and Chao-Sung Lai",

year = "2011",

language = "American English",

note = "2011 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2011) ; Conference date: 17-11-2011 Through 18-11-2011",

}

TY - CONF

T1 - Effects of HfO2 Trapping Layer in Gd2O3 Nanocrystal Nonvolatile Memory with Multi-tunneling Layers

AU - Chen, Chia-Hsin

AU - Liao, Chin-Hsiang

AU - Lin, Chih-Ting

AU - Wang, Jer-Chyi

AU - Huang, Po-Wei

AU - Lai, Chao-Sung

PY - 2011

Y1 - 2011

M3 - Proceeding

T2 - 2011 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2011)

Y2 - 17 November 2011 through 18 November 2011

ER -