Effects of hollow cathode and Ar/H2 ratio on plasma cleaning of Cu leadframe

J. H. Hsieh; C. Li

doi:10.1016/j.tsf.2005.09.050

Effects of hollow cathode and Ar/H₂ ratio on plasma cleaning of Cu leadframe

J. H. Hsieh^*, C. Li

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

14 Scopus citations

Abstract

Oxidized copper leadframe was cleaned using Ar/H₂ plasma in a conventional RF-plasma cleaner. It was found that the etching (cleaning) rate of oxide increased with the decrease of Ar/H₂ ratio, and reached maximum at Ar/H₂ = 0.25, under which the cleaning rate was 12.6 nm/min. The result showed that chemical effect was more significant than the physical sputtering effect. However, the cleaning rate then decreased a little when 100% of hydrogen was used. This could be due to the decrease of plasma density. In order to increase further the etching rate, oxidized samples were placed inside a rectangular hollow cathode. The results showed that the smaller the height of the hollow cathode was, the faster the etching rate would be. This is due to the increase of plasma density. In addition, it is also found that surface micro-roughness decreased with the increase of H₂ concentration.

Original language	English
Pages (from-to)	101-103
Number of pages	3
Journal	Thin Solid Films
Volume	504
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.09.050
State	Published - 10 05 2006
Externally published	Yes

Keywords

Copper oxide
Hollow cathode
Plasma cleaning
Plasma density

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10.1016/j.tsf.2005.09.050

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title = "Effects of hollow cathode and Ar/H2 ratio on plasma cleaning of Cu leadframe",

abstract = "Oxidized copper leadframe was cleaned using Ar/H2 plasma in a conventional RF-plasma cleaner. It was found that the etching (cleaning) rate of oxide increased with the decrease of Ar/H2 ratio, and reached maximum at Ar/H2 = 0.25, under which the cleaning rate was 12.6 nm/min. The result showed that chemical effect was more significant than the physical sputtering effect. However, the cleaning rate then decreased a little when 100% of hydrogen was used. This could be due to the decrease of plasma density. In order to increase further the etching rate, oxidized samples were placed inside a rectangular hollow cathode. The results showed that the smaller the height of the hollow cathode was, the faster the etching rate would be. This is due to the increase of plasma density. In addition, it is also found that surface micro-roughness decreased with the increase of H2 concentration.",

keywords = "Copper oxide, Hollow cathode, Plasma cleaning, Plasma density",

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T1 - Effects of hollow cathode and Ar/H2 ratio on plasma cleaning of Cu leadframe

AU - Hsieh, J. H.

AU - Li, C.

PY - 2006/5/10

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N2 - Oxidized copper leadframe was cleaned using Ar/H2 plasma in a conventional RF-plasma cleaner. It was found that the etching (cleaning) rate of oxide increased with the decrease of Ar/H2 ratio, and reached maximum at Ar/H2 = 0.25, under which the cleaning rate was 12.6 nm/min. The result showed that chemical effect was more significant than the physical sputtering effect. However, the cleaning rate then decreased a little when 100% of hydrogen was used. This could be due to the decrease of plasma density. In order to increase further the etching rate, oxidized samples were placed inside a rectangular hollow cathode. The results showed that the smaller the height of the hollow cathode was, the faster the etching rate would be. This is due to the increase of plasma density. In addition, it is also found that surface micro-roughness decreased with the increase of H2 concentration.

AB - Oxidized copper leadframe was cleaned using Ar/H2 plasma in a conventional RF-plasma cleaner. It was found that the etching (cleaning) rate of oxide increased with the decrease of Ar/H2 ratio, and reached maximum at Ar/H2 = 0.25, under which the cleaning rate was 12.6 nm/min. The result showed that chemical effect was more significant than the physical sputtering effect. However, the cleaning rate then decreased a little when 100% of hydrogen was used. This could be due to the decrease of plasma density. In order to increase further the etching rate, oxidized samples were placed inside a rectangular hollow cathode. The results showed that the smaller the height of the hollow cathode was, the faster the etching rate would be. This is due to the increase of plasma density. In addition, it is also found that surface micro-roughness decreased with the increase of H2 concentration.

KW - Copper oxide

KW - Hollow cathode

KW - Plasma cleaning

KW - Plasma density

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Effects of hollow cathode and Ar/H₂ ratio on plasma cleaning of Cu leadframe

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Keywords

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