Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers

R. Mahapatra, S. Maikap, Je Hun Lee, G. S. Kar, A. Dhar, Nong M. Hwang, Doh Y. Kim, B. K. Mathur, S. K. Ray*

*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

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