Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers
- R. Mahapatra
- , S. Maikap
- , Je Hun Lee
- , G. S. Kar
- , A. Dhar
- , Nong M. Hwang
- , Doh Y. Kim
- , B. K. Mathur
- , S. K. Ray*
*Corresponding author for this work
- Indian Institute of Technology Kharagpur
- Seoul National University
Research output: Contribution to journal › Journal Article › peer-review
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