Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers

B. Senapati; S. K. Samanta; S. Maikap; L. K. Bera; C. K. Maiti

doi:10.1063/1.1311311

Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si_1-xGe_x layers

B. Senapati
, S. K. Samanta
, S. Maikap
, L. K. Bera
, C. K. Maiti^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

11 Scopus citations

Abstract

Gate-quality ultrathin silicon dioxide films on strained-Si_0.74Ge_0.26 layers have been deposited by microwave plasma-enhanced chemical vapor deposition technique using tetraethylorthosilicate. Effect of nitric-oxide (NO)-plasma treatment on the electrical properties of the deposited oxides have been studied using a metal-insulator-semiconductor structure. A significant improvement in the interface trap level density (D_it) and charge trapping behavior under Fowler-Nordheim constant current stressing is observed for NO-plasma treated deposited oxide films.

Original language	English
Pages (from-to)	1840-1842
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	12
DOIs	https://doi.org/10.1063/1.1311311
State	Published - 18 09 2000
Externally published	Yes

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10.1063/1.1311311

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@article{021cac441c1d4d5d9af8d6f5905a82ac,

title = "Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers",

abstract = "Gate-quality ultrathin silicon dioxide films on strained-Si0.74Ge0.26 layers have been deposited by microwave plasma-enhanced chemical vapor deposition technique using tetraethylorthosilicate. Effect of nitric-oxide (NO)-plasma treatment on the electrical properties of the deposited oxides have been studied using a metal-insulator-semiconductor structure. A significant improvement in the interface trap level density (Dit) and charge trapping behavior under Fowler-Nordheim constant current stressing is observed for NO-plasma treated deposited oxide films.",

author = "B. Senapati and Samanta, \{S. K.\} and S. Maikap and Bera, \{L. K.\} and Maiti, \{C. K.\}",

year = "2000",

month = sep,

day = "18",

doi = "10.1063/1.1311311",

language = "英语",

volume = "77",

pages = "1840--1842",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers

AU - Senapati, B.

AU - Samanta, S. K.

AU - Maikap, S.

AU - Bera, L. K.

AU - Maiti, C. K.

PY - 2000/9/18

Y1 - 2000/9/18

N2 - Gate-quality ultrathin silicon dioxide films on strained-Si0.74Ge0.26 layers have been deposited by microwave plasma-enhanced chemical vapor deposition technique using tetraethylorthosilicate. Effect of nitric-oxide (NO)-plasma treatment on the electrical properties of the deposited oxides have been studied using a metal-insulator-semiconductor structure. A significant improvement in the interface trap level density (Dit) and charge trapping behavior under Fowler-Nordheim constant current stressing is observed for NO-plasma treated deposited oxide films.

AB - Gate-quality ultrathin silicon dioxide films on strained-Si0.74Ge0.26 layers have been deposited by microwave plasma-enhanced chemical vapor deposition technique using tetraethylorthosilicate. Effect of nitric-oxide (NO)-plasma treatment on the electrical properties of the deposited oxides have been studied using a metal-insulator-semiconductor structure. A significant improvement in the interface trap level density (Dit) and charge trapping behavior under Fowler-Nordheim constant current stressing is observed for NO-plasma treated deposited oxide films.

UR - https://www.scopus.com/pages/publications/0001438935

U2 - 10.1063/1.1311311

DO - 10.1063/1.1311311

M3 - 文章

AN - SCOPUS:0001438935

SN - 0003-6951

VL - 77

SP - 1840

EP - 1842

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si_1-xGe_x layers

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