Effects of N2 and O2 annealing on the multianalyte biosensing characteristics of CeO2-based electrolyte-insulator- semiconductor structures

Chyuan Haur Kao, Hsiang Chen*, Ming Ling Lee, Che Chun Liu, Herng Yih Ueng, Yu Cheng Chu, Ching Bang Chen, Kow Ming Chang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

29 Scopus citations

Abstract

A CeO2-based multi-analyte electrolyte-insulator-semiconductor (EIS) biosensor has been fabricated on silicon substrate. To enhance the material quality and sensing performance, annealing treatment in N2 and O2 ambient has been incorporated. To examine the annealing effects, material analyses were conducted using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) to identify optimal treatment conditions. Furthermore, sensing performance for various ions of Na+, K+, urea, and glucose has also been tested. Results indicate that the membrane annealed at 800 C in O2 ambience exhibited a better performance with higher multianalyte sensitivity and a lower drift rate compared with the membrane annealed in N2 ambience. Oxygen in O2 ambience may cause stronger reflow and fill in the oxygen vacancy so that the material properties and sensing capability can be improved in O2 annealing ambience.

Original languageEnglish
Pages (from-to)503-510
Number of pages8
JournalSensors and Actuators, B: Chemical
Volume194
DOIs
StatePublished - 04 2014

Keywords

  • CeO
  • Electrolyte-insulator-semiconductor
  • Material quality
  • O and N annealing
  • Sensing performance

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