Effects of O2/N2O-plasma treatment on nitride films on strained Si

L. K. Bera; B. Senapati; S. Maikap; C. K. Maiti

doi:10.1016/S0038-1101(00)00134-9

Effects of O₂/N₂O-plasma treatment on nitride films on strained Si

L. K. Bera, B. Senapati, S. Maikap, C. K. Maiti

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

NH₃ plasma grown ultrathin (<75 angstroms) nitride films on strained Si have been oxidized using O₂- and N₂O-plasma. It is observed that the electrical properties and reliability of metal insulator semiconductor capacitors with N₂O-plasma treated nitride films are better than those using O₂-plasma treated films. N₂O-plasma treatment of nitride films has resulted in a low level of insulator charge density (Q_f/q, 1.6×10¹¹ cm^-2), a high breakdown voltage (approximately 10-11 MV cm), a high charge-to-breakdown value (Q_BD, 11.7 C cm^-2) and low leakage current.

Original language	English
Pages (from-to)	1533-1536
Number of pages	4
Journal	Solid-State Electronics
Volume	44
Issue number	9
DOIs	https://doi.org/10.1016/S0038-1101(00)00134-9
State	Published - 01 09 2000
Externally published	Yes

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title = "Effects of O2/N2O-plasma treatment on nitride films on strained Si",

abstract = "NH3 plasma grown ultrathin (<75 angstroms) nitride films on strained Si have been oxidized using O2- and N2O-plasma. It is observed that the electrical properties and reliability of metal insulator semiconductor capacitors with N2O-plasma treated nitride films are better than those using O2-plasma treated films. N2O-plasma treatment of nitride films has resulted in a low level of insulator charge density (Qf/q, 1.6×1011 cm-2), a high breakdown voltage (approximately 10-11 MV cm), a high charge-to-breakdown value (QBD, 11.7 C cm-2) and low leakage current.",

author = "Bera, {L. K.} and B. Senapati and S. Maikap and Maiti, {C. K.}",

year = "2000",

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doi = "10.1016/S0038-1101(00)00134-9",

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T1 - Effects of O2/N2O-plasma treatment on nitride films on strained Si

AU - Bera, L. K.

AU - Senapati, B.

AU - Maikap, S.

AU - Maiti, C. K.

PY - 2000/9/1

Y1 - 2000/9/1

N2 - NH3 plasma grown ultrathin (<75 angstroms) nitride films on strained Si have been oxidized using O2- and N2O-plasma. It is observed that the electrical properties and reliability of metal insulator semiconductor capacitors with N2O-plasma treated nitride films are better than those using O2-plasma treated films. N2O-plasma treatment of nitride films has resulted in a low level of insulator charge density (Qf/q, 1.6×1011 cm-2), a high breakdown voltage (approximately 10-11 MV cm), a high charge-to-breakdown value (QBD, 11.7 C cm-2) and low leakage current.

AB - NH3 plasma grown ultrathin (<75 angstroms) nitride films on strained Si have been oxidized using O2- and N2O-plasma. It is observed that the electrical properties and reliability of metal insulator semiconductor capacitors with N2O-plasma treated nitride films are better than those using O2-plasma treated films. N2O-plasma treatment of nitride films has resulted in a low level of insulator charge density (Qf/q, 1.6×1011 cm-2), a high breakdown voltage (approximately 10-11 MV cm), a high charge-to-breakdown value (QBD, 11.7 C cm-2) and low leakage current.

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U2 - 10.1016/S0038-1101(00)00134-9

DO - 10.1016/S0038-1101(00)00134-9

M3 - 文章

AN - SCOPUS:0034274614

SN - 0038-1101

VL - 44

SP - 1533

EP - 1536

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

Effects of O₂/N₂O-plasma treatment on nitride films on strained Si

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