Effects of oxygen content and postdeposition annealing on the physical and electrical properties of thin Sm 2 O 3 gate dielectrics

Tung Ming Pan*, Chun Chin Huang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

38 Scopus citations

Abstract

In this paper, we describe the physical properties and electrical characteristics of thin Sm 2 O 3 dielectric films deposited on Si (100) by means of rf reactive sputtering. The structural and morphological features of these films were studied, as a function of the growth conditions (three various argon-to-oxygen flow ratios: 10/15, 15/10 and 20/5, and temperature from 600 to 800 °C), by x-ray diffraction, atomic force microscopy, and x-ray photoelectron spectroscopy. It is found that Sm 2 O 3 dielectric prepared under 15/10 flow ratio and annealed at 700 °C exhibits a thinner capacitance equivalent thickness and excellent electrical properties, including the interface trap density, the hysteresis and frequency dispersion in the capacitance-voltage curves. This condition is attributed to the reduction of the interfacial SiO 2 and silicate formation, and the small of surface roughness due to the optimization of oxygen in the Sm 2 O 3 film.

Original languageEnglish
Pages (from-to)7186-7193
Number of pages8
JournalApplied Surface Science
Volume256
Issue number23
DOIs
StatePublished - 15 09 2010

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