Effects of oxygen content on the structural and electrical properties of Thin Yb₂O₃ gate dielectrics

Chemistry

• Liquid Film 100%
• Electrical Property 100%
• Dioxygen 100%
• Dielectric Material 100%
• Optimization 33%
• X-Ray Diffraction 33%
• Reaction Temperature 33%
• Voltage 33%
• Concentration 33%
• Reduction 33%
• Thickness 33%
• Interface Trap 33%
• Atomic Force Microscopy 33%
• X-Ray Photoelectron Spectroscopy 33%
• Silicon 33%
• Argon 33%
• Metal Oxide 33%
• Reactive Sputtering 33%
• Slope 33%
• Trap Density Measurement 33%
• Surface Roughness 33%

Physics

• Oxygen 100%
• Dielectrics 100%
• Electrical Properties 100%
• Capacitance 66%
• Emission 66%
• Growth 33%
• Substrates 33%
• Temperature 33%
• Ratios 33%
• Metal 33%
• Hysteresis 33%
• Sputtering 33%
• Optimization 33%
• Surface Roughness 33%
• X Ray Diffraction 33%
• X Ray Spectroscopy 33%
• Electric Potential 33%
• Silicon 33%
• Atomic Force Microscopy 33%
• Minimal Surface 33%

Material Science

• Electrical Property 100%
• Dielectric Material 100%
• Capacitance 66%
• Temperature 33%
• Density 33%
• Film 33%
• X-Ray Diffraction 33%
• Surface Roughness 33%
• Sputtering 33%
• Structural Property 33%
• Atomic Force Microscopy 33%
• Metal Oxide 33%
• Argon 33%