Effects of oxynitride buffer layer on the electrical characteristics of poly-silicon TFTs using P2O3 gate dielectric

Tung Ming Pan; Tin Wei Wu

doi:10.1109/TED.2008.920030

Effects of oxynitride buffer layer on the electrical characteristics of poly-silicon TFTs using P₂O₃ gate dielectric

Tung Ming Pan^*, Tin Wei Wu

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

12 Scopus citations

Abstract

In this paper, we have developed high-k Pr₂O₃ poly-Si thin-film transistors (TFTs) using different N₂O plasma power treatments. High-k Pr₂O₂ poly-Si TFT devices using a 200-W plasma power exhibited better electrical characteristics in terms of high effective carrier mobility, high driving current, small subthreshold slope, and high I_ON /I_OFF current ratio. This result is attributed to the smooth Pr₂O₃/poly-Si interface and low interface trap density. Pr₂O₃ poly-Si TFT with a 200-W N₂O plasma power also enhanced electrical reliabilities such as hot carrier and positive bias temperature instability. All of these results suggest that a high-k Pr₂O₂ gate dielectric with the oxynitride buffer layer is a good candidate for high-performance low-temperature poly-Si TFTs.

Original language	English
Pages (from-to)	1379-1385
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	6
DOIs	https://doi.org/10.1109/TED.2008.920030
State	Published - 06 2008

Keywords

High-k
Interface trap density
NO plasma power
PrO
SiON buffer layer
Smooth interface

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10.1109/TED.2008.920030

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title = "Effects of oxynitride buffer layer on the electrical characteristics of poly-silicon TFTs using P2O3 gate dielectric",

abstract = "In this paper, we have developed high-k Pr2O3 poly-Si thin-film transistors (TFTs) using different N2O plasma power treatments. High-k Pr2O2 poly-Si TFT devices using a 200-W plasma power exhibited better electrical characteristics in terms of high effective carrier mobility, high driving current, small subthreshold slope, and high ION /IOFF current ratio. This result is attributed to the smooth Pr2O3/poly-Si interface and low interface trap density. Pr2O3 poly-Si TFT with a 200-W N2O plasma power also enhanced electrical reliabilities such as hot carrier and positive bias temperature instability. All of these results suggest that a high-k Pr2O2 gate dielectric with the oxynitride buffer layer is a good candidate for high-performance low-temperature poly-Si TFTs.",

keywords = "High-k, Interface trap density, NO plasma power, PrO, SiON buffer layer, Smooth interface",

author = "Pan, {Tung Ming} and Wu, {Tin Wei}",

year = "2008",

month = jun,

doi = "10.1109/TED.2008.920030",

language = "英语",

volume = "55",

pages = "1379--1385",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Effects of oxynitride buffer layer on the electrical characteristics of poly-silicon TFTs using P2O3 gate dielectric

AU - Pan, Tung Ming

AU - Wu, Tin Wei

PY - 2008/6

Y1 - 2008/6

N2 - In this paper, we have developed high-k Pr2O3 poly-Si thin-film transistors (TFTs) using different N2O plasma power treatments. High-k Pr2O2 poly-Si TFT devices using a 200-W plasma power exhibited better electrical characteristics in terms of high effective carrier mobility, high driving current, small subthreshold slope, and high ION /IOFF current ratio. This result is attributed to the smooth Pr2O3/poly-Si interface and low interface trap density. Pr2O3 poly-Si TFT with a 200-W N2O plasma power also enhanced electrical reliabilities such as hot carrier and positive bias temperature instability. All of these results suggest that a high-k Pr2O2 gate dielectric with the oxynitride buffer layer is a good candidate for high-performance low-temperature poly-Si TFTs.

AB - In this paper, we have developed high-k Pr2O3 poly-Si thin-film transistors (TFTs) using different N2O plasma power treatments. High-k Pr2O2 poly-Si TFT devices using a 200-W plasma power exhibited better electrical characteristics in terms of high effective carrier mobility, high driving current, small subthreshold slope, and high ION /IOFF current ratio. This result is attributed to the smooth Pr2O3/poly-Si interface and low interface trap density. Pr2O3 poly-Si TFT with a 200-W N2O plasma power also enhanced electrical reliabilities such as hot carrier and positive bias temperature instability. All of these results suggest that a high-k Pr2O2 gate dielectric with the oxynitride buffer layer is a good candidate for high-performance low-temperature poly-Si TFTs.

KW - High-k

KW - Interface trap density

KW - NO plasma power

KW - PrO

KW - SiON buffer layer

KW - Smooth interface

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U2 - 10.1109/TED.2008.920030

DO - 10.1109/TED.2008.920030

M3 - 文章

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SN - 0018-9383

VL - 55

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EP - 1385

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

Effects of oxynitride buffer layer on the electrical characteristics of poly-silicon TFTs using P₂O₃ gate dielectric

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Keywords

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