Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides

M. N. Chang; K. C. Hsieh; T. E. Nee; J. I. Chyi

doi:10.1063/1.371073

Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides

M. N. Chang^*, K. C. Hsieh, T. E. Nee, J. I. Chyi

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

8 Scopus citations

Abstract

Doping influences the point defect concentration which, in turn, affects the As precipitation in III-V arsenides. Bright-field images of several III-V arsenide semiconductor structures were analyzed as a function of annealing temperature and doping level. Results show that column III vacancies significantly affect the As precipitation in these semiconductors.

Original language	English
Pages (from-to)	2442-2447
Number of pages	6
Journal	Journal of Applied Physics
Volume	86
Issue number	5
DOIs	https://doi.org/10.1063/1.371073
State	Published - 09 1999
Externally published	Yes

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@article{f06ab0b039c1442da981b96269dd0bb1,

title = "Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides",

abstract = "Doping influences the point defect concentration which, in turn, affects the As precipitation in III-V arsenides. Bright-field images of several III-V arsenide semiconductor structures were analyzed as a function of annealing temperature and doping level. Results show that column III vacancies significantly affect the As precipitation in these semiconductors.",

author = "Chang, {M. N.} and Hsieh, {K. C.} and Nee, {T. E.} and Chyi, {J. I.}",

year = "1999",

month = sep,

doi = "10.1063/1.371073",

language = "英语",

volume = "86",

pages = "2442--2447",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics",

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T1 - Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides

AU - Chang, M. N.

AU - Hsieh, K. C.

AU - Nee, T. E.

AU - Chyi, J. I.

PY - 1999/9

Y1 - 1999/9

N2 - Doping influences the point defect concentration which, in turn, affects the As precipitation in III-V arsenides. Bright-field images of several III-V arsenide semiconductor structures were analyzed as a function of annealing temperature and doping level. Results show that column III vacancies significantly affect the As precipitation in these semiconductors.

AB - Doping influences the point defect concentration which, in turn, affects the As precipitation in III-V arsenides. Bright-field images of several III-V arsenide semiconductor structures were analyzed as a function of annealing temperature and doping level. Results show that column III vacancies significantly affect the As precipitation in these semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=0032620395&partnerID=8YFLogxK

U2 - 10.1063/1.371073

DO - 10.1063/1.371073

M3 - 文章

AN - SCOPUS:0032620395

SN - 0021-8979

VL - 86

SP - 2442

EP - 2447

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides

Abstract

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