Effects of RF power on the structural, optical and electrical properties of Al-doped zinc oxide films

Shou Yi Kuo; Kou Chen Liu; Fang I. Lai; Jui Fu Yang; Wei Chun Chen; Ming Yang Hsieh; Hsin I. Lin; Woei Tyng Lin

doi:10.1016/j.microrel.2010.01.042

Effects of RF power on the structural, optical and electrical properties of Al-doped zinc oxide films

Shou Yi Kuo^*, Kou Chen Liu, Fang I. Lai, Jui Fu Yang, Wei Chun Chen, Ming Yang Hsieh, Hsin I. Lin, Woei Tyng Lin

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

69 Scopus citations

Abstract

In this study, we discussed the effects of growth parameters on the structural and optical properties of Al-doped zinc oxide (AZO) deposited at room temperature by radio-frequency magnetron sputtering. The AZO films have been characterized in detail using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, Hall-effect measurement system and UV-visible spectrophotometer. It was found that the morphological, structural, electrical and optical properties of AZO films are greatly dependent on sputtering power. Collision between sputter species and surface morphology play important roles in optoelectrical properties of AZO films. According to our experimental results, the AZO films can be used in versatile devices to meet various requirements.

Original language	English
Pages (from-to)	730-733
Number of pages	4
Journal	Microelectronics Reliability
Volume	50
Issue number	5
DOIs	https://doi.org/10.1016/j.microrel.2010.01.042
State	Published - 05 2010

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title = "Effects of RF power on the structural, optical and electrical properties of Al-doped zinc oxide films",

abstract = "In this study, we discussed the effects of growth parameters on the structural and optical properties of Al-doped zinc oxide (AZO) deposited at room temperature by radio-frequency magnetron sputtering. The AZO films have been characterized in detail using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, Hall-effect measurement system and UV-visible spectrophotometer. It was found that the morphological, structural, electrical and optical properties of AZO films are greatly dependent on sputtering power. Collision between sputter species and surface morphology play important roles in optoelectrical properties of AZO films. According to our experimental results, the AZO films can be used in versatile devices to meet various requirements.",

author = "Kuo, {Shou Yi} and Liu, {Kou Chen} and Lai, {Fang I.} and Yang, {Jui Fu} and Chen, {Wei Chun} and Hsieh, {Ming Yang} and Lin, {Hsin I.} and Lin, {Woei Tyng}",

year = "2010",

month = may,

doi = "10.1016/j.microrel.2010.01.042",

language = "英语",

volume = "50",

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T1 - Effects of RF power on the structural, optical and electrical properties of Al-doped zinc oxide films

AU - Kuo, Shou Yi

AU - Liu, Kou Chen

AU - Lai, Fang I.

AU - Yang, Jui Fu

AU - Chen, Wei Chun

AU - Hsieh, Ming Yang

AU - Lin, Hsin I.

AU - Lin, Woei Tyng

PY - 2010/5

Y1 - 2010/5

N2 - In this study, we discussed the effects of growth parameters on the structural and optical properties of Al-doped zinc oxide (AZO) deposited at room temperature by radio-frequency magnetron sputtering. The AZO films have been characterized in detail using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, Hall-effect measurement system and UV-visible spectrophotometer. It was found that the morphological, structural, electrical and optical properties of AZO films are greatly dependent on sputtering power. Collision between sputter species and surface morphology play important roles in optoelectrical properties of AZO films. According to our experimental results, the AZO films can be used in versatile devices to meet various requirements.

AB - In this study, we discussed the effects of growth parameters on the structural and optical properties of Al-doped zinc oxide (AZO) deposited at room temperature by radio-frequency magnetron sputtering. The AZO films have been characterized in detail using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, Hall-effect measurement system and UV-visible spectrophotometer. It was found that the morphological, structural, electrical and optical properties of AZO films are greatly dependent on sputtering power. Collision between sputter species and surface morphology play important roles in optoelectrical properties of AZO films. According to our experimental results, the AZO films can be used in versatile devices to meet various requirements.

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U2 - 10.1016/j.microrel.2010.01.042

DO - 10.1016/j.microrel.2010.01.042

M3 - 文章

AN - SCOPUS:77953139084

SN - 0026-2714

VL - 50

SP - 730

EP - 733

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 5

ER -

Effects of RF power on the structural, optical and electrical properties of Al-doped zinc oxide films

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