Effects of the Fe-doped GaN buffer in AlGaN/GaN HEMTs on SiC substrate

Hou Yu Wang; Kai Di Mai; Li Yi Peng; Yuan Hsiang Cheng; Hsien Chin Chiu

doi:10.1109/EDSSC.2015.7285198

Effects of the Fe-doped GaN buffer in AlGaN/GaN HEMTs on SiC substrate

Hou Yu Wang
, Kai Di Mai
, Li Yi Peng
, Yuan Hsiang Cheng
, Hsien Chin Chiu

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) with a Fe-doped GaN buffer on a SiC substrate were presented for power switching applications. In order to investigate the effects of an Fe-doped GaN buffer on device characteristics, HEMT devices with an Fe-doped GaN buffer on SiC were fabricated alongside with the conventional devices utilizing an unintentionally doped (UID) u-GaN buffer on SiC, and compared their device characteristics. The charge-injection-type hysteresis voltage shift ΔV of 42mV is observed in the C-V loop measurement, after the insertion of the Fe-doped HEMT as gate metal layer. The voltage shift ΔV of the u-GaN HEMT was 0.03mV. It shows that the Fe doping increases the trap at GaN buffer. However the off-state breakdown behavior of Fe-GaN (V_BV=195V) was better than u-GaN (V_BV=148V). The RF performance of Fe-GaN, the current gain cutoff frequency (f_T) of 5.4GHz and f_max of 15.4GHz, also higher than the ft=4.2GHz and an f_max=13.4GHz of the u-GaN HEMT. It's shown that Fe-GaN has potential for high power and high frequency transistors.

Original language	English
Title of host publication	Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	645-648
Number of pages	4
ISBN (Electronic)	9781479983636
DOIs	https://doi.org/10.1109/EDSSC.2015.7285198
State	Published - 30 09 2015
Event	11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 - Singapore, Singapore Duration: 01 06 2015 → 04 06 2015

Publication series

Name	Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015

Conference

Conference	11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
Country/Territory	Singapore
City	Singapore
Period	01/06/15 → 04/06/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

AlGaN/GaN HEMT
Fe-doped
SiC substrate

Access to Document

10.1109/EDSSC.2015.7285198

Cite this

Wang, H. Y., Mai, K. D., Peng, L. Y., Cheng, Y. H., & Chiu, H. C. (2015). Effects of the Fe-doped GaN buffer in AlGaN/GaN HEMTs on SiC substrate. In Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 (pp. 645-648). Article 7285198 (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2015.7285198

Wang, Hou Yu ; Mai, Kai Di ; Peng, Li Yi et al. / Effects of the Fe-doped GaN buffer in AlGaN/GaN HEMTs on SiC substrate. Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 645-648 (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015).

@inproceedings{09e8c337ddaf4f62bffeddc8585fc227,

title = "Effects of the Fe-doped GaN buffer in AlGaN/GaN HEMTs on SiC substrate",

abstract = "AlGaN/GaN high electron mobility transistors (HEMTs) with a Fe-doped GaN buffer on a SiC substrate were presented for power switching applications. In order to investigate the effects of an Fe-doped GaN buffer on device characteristics, HEMT devices with an Fe-doped GaN buffer on SiC were fabricated alongside with the conventional devices utilizing an unintentionally doped (UID) u-GaN buffer on SiC, and compared their device characteristics. The charge-injection-type hysteresis voltage shift ΔV of 42mV is observed in the C-V loop measurement, after the insertion of the Fe-doped HEMT as gate metal layer. The voltage shift ΔV of the u-GaN HEMT was 0.03mV. It shows that the Fe doping increases the trap at GaN buffer. However the off-state breakdown behavior of Fe-GaN (VBV=195V) was better than u-GaN (VBV=148V). The RF performance of Fe-GaN, the current gain cutoff frequency (fT) of 5.4GHz and fmax of 15.4GHz, also higher than the ft=4.2GHz and an fmax=13.4GHz of the u-GaN HEMT. It's shown that Fe-GaN has potential for high power and high frequency transistors.",

keywords = "AlGaN/GaN HEMT, Fe-doped, SiC substrate",

author = "Wang, \{Hou Yu\} and Mai, \{Kai Di\} and Peng, \{Li Yi\} and Cheng, \{Yuan Hsiang\} and Chiu, \{Hsien Chin\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 ; Conference date: 01-06-2015 Through 04-06-2015",

year = "2015",

month = sep,

day = "30",

doi = "10.1109/EDSSC.2015.7285198",

language = "英语",

series = "Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015",

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Wang, HY, Mai, KD, Peng, LY, Cheng, YH & Chiu, HC 2015, Effects of the Fe-doped GaN buffer in AlGaN/GaN HEMTs on SiC substrate. in Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015., 7285198, Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015, Institute of Electrical and Electronics Engineers Inc., pp. 645-648, 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015, Singapore, Singapore, 01/06/15. https://doi.org/10.1109/EDSSC.2015.7285198

Effects of the Fe-doped GaN buffer in AlGaN/GaN HEMTs on SiC substrate. / Wang, Hou Yu; Mai, Kai Di; Peng, Li Yi et al.
Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 645-648 7285198 (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effects of the Fe-doped GaN buffer in AlGaN/GaN HEMTs on SiC substrate

AU - Wang, Hou Yu

AU - Mai, Kai Di

AU - Peng, Li Yi

AU - Cheng, Yuan Hsiang

AU - Chiu, Hsien Chin

PY - 2015/9/30

Y1 - 2015/9/30

N2 - AlGaN/GaN high electron mobility transistors (HEMTs) with a Fe-doped GaN buffer on a SiC substrate were presented for power switching applications. In order to investigate the effects of an Fe-doped GaN buffer on device characteristics, HEMT devices with an Fe-doped GaN buffer on SiC were fabricated alongside with the conventional devices utilizing an unintentionally doped (UID) u-GaN buffer on SiC, and compared their device characteristics. The charge-injection-type hysteresis voltage shift ΔV of 42mV is observed in the C-V loop measurement, after the insertion of the Fe-doped HEMT as gate metal layer. The voltage shift ΔV of the u-GaN HEMT was 0.03mV. It shows that the Fe doping increases the trap at GaN buffer. However the off-state breakdown behavior of Fe-GaN (VBV=195V) was better than u-GaN (VBV=148V). The RF performance of Fe-GaN, the current gain cutoff frequency (fT) of 5.4GHz and fmax of 15.4GHz, also higher than the ft=4.2GHz and an fmax=13.4GHz of the u-GaN HEMT. It's shown that Fe-GaN has potential for high power and high frequency transistors.

AB - AlGaN/GaN high electron mobility transistors (HEMTs) with a Fe-doped GaN buffer on a SiC substrate were presented for power switching applications. In order to investigate the effects of an Fe-doped GaN buffer on device characteristics, HEMT devices with an Fe-doped GaN buffer on SiC were fabricated alongside with the conventional devices utilizing an unintentionally doped (UID) u-GaN buffer on SiC, and compared their device characteristics. The charge-injection-type hysteresis voltage shift ΔV of 42mV is observed in the C-V loop measurement, after the insertion of the Fe-doped HEMT as gate metal layer. The voltage shift ΔV of the u-GaN HEMT was 0.03mV. It shows that the Fe doping increases the trap at GaN buffer. However the off-state breakdown behavior of Fe-GaN (VBV=195V) was better than u-GaN (VBV=148V). The RF performance of Fe-GaN, the current gain cutoff frequency (fT) of 5.4GHz and fmax of 15.4GHz, also higher than the ft=4.2GHz and an fmax=13.4GHz of the u-GaN HEMT. It's shown that Fe-GaN has potential for high power and high frequency transistors.

KW - AlGaN/GaN HEMT

KW - Fe-doped

KW - SiC substrate

UR - https://www.scopus.com/pages/publications/84962193099

U2 - 10.1109/EDSSC.2015.7285198

DO - 10.1109/EDSSC.2015.7285198

M3 - 会议稿件

AN - SCOPUS:84962193099

T3 - Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015

SP - 645

EP - 648

BT - Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015

Y2 - 1 June 2015 through 4 June 2015

ER -

Wang HY, Mai KD, Peng LY, Cheng YH, Chiu HC. Effects of the Fe-doped GaN buffer in AlGaN/GaN HEMTs on SiC substrate. In Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 645-648. 7285198. (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015). doi: 10.1109/EDSSC.2015.7285198

Effects of the Fe-doped GaN buffer in AlGaN/GaN HEMTs on SiC substrate

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