Effects of the material polarity on the green emission properties of InGaN/GaN multiple quantum wells

Yen Lin Lai; Chuan Pu Liu; Yung Hsiang Lin; Ray Ming Lin; Dong Yuan Lyu; Zhao Xiang Peng; Tai Yuan Lin

doi:10.1063/1.2360247

Effects of the material polarity on the green emission properties of InGaN/GaN multiple quantum wells

Yen Lin Lai, Chuan Pu Liu^*, Yung Hsiang Lin, Ray Ming Lin, Dong Yuan Lyu, Zhao Xiang Peng, Tai Yuan Lin

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

30 Scopus citations

Abstract

Green-light-emission InGaNGaN multiple quantum wells (MQWs) with different polarities were grown by metal organic chemical vapor deposition. A clear phase separation was observed both in the Ga- and N-polarity samples by high resolution transmission electron microscopy, corresponding to two InGaN-related emissions (In-rich dots and an InGaN matrix) seen in photoluminescence spectra. The dot-related emission in the Ga-polarity MQWs shows stronger carrier localization, as well as a weak influence of defects and temperature insensitivity, when compared to the N-polarity MQWs. In addition, efficient carrier transport, from the low-indium InGaN matrix to high-indium In-rich dots, was observed in the Ga-polarity structure, enhancing the function of quantum-dot structures with Ga polarity, and resulting in a high quantum yield of green light emission.

Original language	English
Article number	151906
Journal	Applied Physics Letters
Volume	89
Issue number	15
DOIs	https://doi.org/10.1063/1.2360247
State	Published - 2006

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title = "Effects of the material polarity on the green emission properties of InGaN/GaN multiple quantum wells",

abstract = "Green-light-emission InGaNGaN multiple quantum wells (MQWs) with different polarities were grown by metal organic chemical vapor deposition. A clear phase separation was observed both in the Ga- and N-polarity samples by high resolution transmission electron microscopy, corresponding to two InGaN-related emissions (In-rich dots and an InGaN matrix) seen in photoluminescence spectra. The dot-related emission in the Ga-polarity MQWs shows stronger carrier localization, as well as a weak influence of defects and temperature insensitivity, when compared to the N-polarity MQWs. In addition, efficient carrier transport, from the low-indium InGaN matrix to high-indium In-rich dots, was observed in the Ga-polarity structure, enhancing the function of quantum-dot structures with Ga polarity, and resulting in a high quantum yield of green light emission.",

author = "Lai, {Yen Lin} and Liu, {Chuan Pu} and Lin, {Yung Hsiang} and Lin, {Ray Ming} and Lyu, {Dong Yuan} and Peng, {Zhao Xiang} and Lin, {Tai Yuan}",

year = "2006",

doi = "10.1063/1.2360247",

language = "英语",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

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TY - JOUR

T1 - Effects of the material polarity on the green emission properties of InGaN/GaN multiple quantum wells

AU - Lai, Yen Lin

AU - Liu, Chuan Pu

AU - Lin, Yung Hsiang

AU - Lin, Ray Ming

AU - Lyu, Dong Yuan

AU - Peng, Zhao Xiang

AU - Lin, Tai Yuan

PY - 2006

Y1 - 2006

N2 - Green-light-emission InGaNGaN multiple quantum wells (MQWs) with different polarities were grown by metal organic chemical vapor deposition. A clear phase separation was observed both in the Ga- and N-polarity samples by high resolution transmission electron microscopy, corresponding to two InGaN-related emissions (In-rich dots and an InGaN matrix) seen in photoluminescence spectra. The dot-related emission in the Ga-polarity MQWs shows stronger carrier localization, as well as a weak influence of defects and temperature insensitivity, when compared to the N-polarity MQWs. In addition, efficient carrier transport, from the low-indium InGaN matrix to high-indium In-rich dots, was observed in the Ga-polarity structure, enhancing the function of quantum-dot structures with Ga polarity, and resulting in a high quantum yield of green light emission.

AB - Green-light-emission InGaNGaN multiple quantum wells (MQWs) with different polarities were grown by metal organic chemical vapor deposition. A clear phase separation was observed both in the Ga- and N-polarity samples by high resolution transmission electron microscopy, corresponding to two InGaN-related emissions (In-rich dots and an InGaN matrix) seen in photoluminescence spectra. The dot-related emission in the Ga-polarity MQWs shows stronger carrier localization, as well as a weak influence of defects and temperature insensitivity, when compared to the N-polarity MQWs. In addition, efficient carrier transport, from the low-indium InGaN matrix to high-indium In-rich dots, was observed in the Ga-polarity structure, enhancing the function of quantum-dot structures with Ga polarity, and resulting in a high quantum yield of green light emission.

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U2 - 10.1063/1.2360247

DO - 10.1063/1.2360247

M3 - 文章

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SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 151906

ER -

Effects of the material polarity on the green emission properties of InGaN/GaN multiple quantum wells

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