Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells

C. C. Chuo; C. M. Lee; T. E. Nee; J. I. Chyi

doi:10.1063/1.126815

Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells

C. C. Chuo^*, C. M. Lee, T. E. Nee, J. I. Chyi

^*Corresponding author for this work

National Central University

Research output: Contribution to journal › Journal Article › peer-review

56 Scopus citations

Abstract

Postgrowth thermal annealing was applied to investigate the optical and structural properties of In_xGa_1-xN/GaN multiple quantum wells with high InN mole fraction. Thermal annealing at 900°C results in a twentyfold increase of the integrated photoluminescence intensity. Photoluminescence emission is also improved from a broad band for the as-grown sample to two dominant peaks for the annealed sample. Cross-sectional transmission electron microscopy shows the existence of quantum dot-like islands in the wells for the as-grown sample but these islands are significantly reduced after thermal annealing at 900°C.

Original language	English
Pages (from-to)	3902-3904
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	26
DOIs	https://doi.org/10.1063/1.126815
State	Published - 26 06 2000
Externally published	Yes

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title = "Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells",

abstract = "Postgrowth thermal annealing was applied to investigate the optical and structural properties of InxGa1-xN/GaN multiple quantum wells with high InN mole fraction. Thermal annealing at 900°C results in a twentyfold increase of the integrated photoluminescence intensity. Photoluminescence emission is also improved from a broad band for the as-grown sample to two dominant peaks for the annealed sample. Cross-sectional transmission electron microscopy shows the existence of quantum dot-like islands in the wells for the as-grown sample but these islands are significantly reduced after thermal annealing at 900°C.",

author = "Chuo, {C. C.} and Lee, {C. M.} and Nee, {T. E.} and Chyi, {J. I.}",

year = "2000",

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doi = "10.1063/1.126815",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells

AU - Chuo, C. C.

AU - Lee, C. M.

AU - Nee, T. E.

AU - Chyi, J. I.

PY - 2000/6/26

Y1 - 2000/6/26

N2 - Postgrowth thermal annealing was applied to investigate the optical and structural properties of InxGa1-xN/GaN multiple quantum wells with high InN mole fraction. Thermal annealing at 900°C results in a twentyfold increase of the integrated photoluminescence intensity. Photoluminescence emission is also improved from a broad band for the as-grown sample to two dominant peaks for the annealed sample. Cross-sectional transmission electron microscopy shows the existence of quantum dot-like islands in the wells for the as-grown sample but these islands are significantly reduced after thermal annealing at 900°C.

AB - Postgrowth thermal annealing was applied to investigate the optical and structural properties of InxGa1-xN/GaN multiple quantum wells with high InN mole fraction. Thermal annealing at 900°C results in a twentyfold increase of the integrated photoluminescence intensity. Photoluminescence emission is also improved from a broad band for the as-grown sample to two dominant peaks for the annealed sample. Cross-sectional transmission electron microscopy shows the existence of quantum dot-like islands in the wells for the as-grown sample but these islands are significantly reduced after thermal annealing at 900°C.

UR - http://www.scopus.com/inward/record.url?scp=0041727710&partnerID=8YFLogxK

U2 - 10.1063/1.126815

DO - 10.1063/1.126815

M3 - 文章

AN - SCOPUS:0041727710

SN - 0003-6951

VL - 76

SP - 3902

EP - 3904

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells

Abstract

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