Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells

C. C. Chuo; C. M. Lee; T. E. Nee; J. I. Chyi

doi:10.1063/1.126815

Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells

C. C. Chuo^*
, C. M. Lee
, T. E. Nee
, J. I. Chyi

^*Corresponding author for this work

National Central University

Research output: Contribution to journal › Journal Article › peer-review

58 Scopus citations

Abstract

Postgrowth thermal annealing was applied to investigate the optical and structural properties of In_xGa_1-xN/GaN multiple quantum wells with high InN mole fraction. Thermal annealing at 900°C results in a twentyfold increase of the integrated photoluminescence intensity. Photoluminescence emission is also improved from a broad band for the as-grown sample to two dominant peaks for the annealed sample. Cross-sectional transmission electron microscopy shows the existence of quantum dot-like islands in the wells for the as-grown sample but these islands are significantly reduced after thermal annealing at 900°C.

Original language	English
Pages (from-to)	3902-3904
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	26
DOIs	https://doi.org/10.1063/1.126815
State	Published - 26 06 2000
Externally published	Yes

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@article{b8c8b4b1a1144e5e9e12bb2cf2f48d0b,

title = "Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells",

abstract = "Postgrowth thermal annealing was applied to investigate the optical and structural properties of InxGa1-xN/GaN multiple quantum wells with high InN mole fraction. Thermal annealing at 900°C results in a twentyfold increase of the integrated photoluminescence intensity. Photoluminescence emission is also improved from a broad band for the as-grown sample to two dominant peaks for the annealed sample. Cross-sectional transmission electron microscopy shows the existence of quantum dot-like islands in the wells for the as-grown sample but these islands are significantly reduced after thermal annealing at 900°C.",

author = "Chuo, \{C. C.\} and Lee, \{C. M.\} and Nee, \{T. E.\} and Chyi, \{J. I.\}",

year = "2000",

month = jun,

day = "26",

doi = "10.1063/1.126815",

language = "英语",

volume = "76",

pages = "3902--3904",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

}

TY - JOUR

T1 - Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells

AU - Chuo, C. C.

AU - Lee, C. M.

AU - Nee, T. E.

AU - Chyi, J. I.

PY - 2000/6/26

Y1 - 2000/6/26

N2 - Postgrowth thermal annealing was applied to investigate the optical and structural properties of InxGa1-xN/GaN multiple quantum wells with high InN mole fraction. Thermal annealing at 900°C results in a twentyfold increase of the integrated photoluminescence intensity. Photoluminescence emission is also improved from a broad band for the as-grown sample to two dominant peaks for the annealed sample. Cross-sectional transmission electron microscopy shows the existence of quantum dot-like islands in the wells for the as-grown sample but these islands are significantly reduced after thermal annealing at 900°C.

AB - Postgrowth thermal annealing was applied to investigate the optical and structural properties of InxGa1-xN/GaN multiple quantum wells with high InN mole fraction. Thermal annealing at 900°C results in a twentyfold increase of the integrated photoluminescence intensity. Photoluminescence emission is also improved from a broad band for the as-grown sample to two dominant peaks for the annealed sample. Cross-sectional transmission electron microscopy shows the existence of quantum dot-like islands in the wells for the as-grown sample but these islands are significantly reduced after thermal annealing at 900°C.

UR - https://www.scopus.com/pages/publications/0041727710

U2 - 10.1063/1.126815

DO - 10.1063/1.126815

M3 - 文章

AN - SCOPUS:0041727710

SN - 0003-6951

VL - 76

SP - 3902

EP - 3904

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells

Abstract

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