Effects of TiCl4-based PECVD-Ti/CVD-TiN barrier layers on the BF2-doped Si for contact plug technology

Tsai Yu Huang; Wen Ping Liang; Kuo Hui Su; Chang Rong Wu; Yu Chang Lin; Wakabayashi Satoshi; Jeng Ping Lin

doi:10.1149/1.2790405

Effects of TiCl₄-based PECVD-Ti/CVD-TiN barrier layers on the BF₂-doped Si for contact plug technology

Tsai Yu Huang^*, Wen Ping Liang, Kuo Hui Su, Chang Rong Wu, Yu Chang Lin, Wakabayashi Satoshi, Jeng Ping Lin

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We have performed the investigation of Ti/TiN barrier layers deposited by PECVD of Ti and CVD of TiN using TiCl₄ as a reactant on a heavily boron doped Si substrate. High contact resistance arose from both the boron out-diffusion, and high chlorine content in the Ti film with respect to the relatively high, and low process temperatures of PECVD-Ti deposition, respectively. In the optimized PECVD-Ti process condition with the satisfied boron dose in the Si substrate, comparable yields can be achieved with that using the 110nm deep trench Dynamic Random Access Memory (DRAM) technology with PVD-Ti method. Furthermore, using PECVD-Ti/CVD-TiN method for the contact metallization, it can obtain a uniform thickness of liner in the hole-type contact with aspect ratio to 6.

Original language	English
Title of host publication	ECS Trancsactions - Thin Film Materials, Processes, and Reliability
Pages	15-20
Number of pages	6
Edition	12
DOIs	https://doi.org/10.1149/1.2790405
State	Published - 2007
Externally published	Yes
Event	Thin Film Materials, Processes, and Reliability - 211th ECS Meeting - Chicago, IL, United States Duration: 06 05 2007 → 11 05 2007

Publication series

Name	ECS Transactions
Number	12
Volume	6
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Thin Film Materials, Processes, and Reliability - 211th ECS Meeting
Country/Territory	United States
City	Chicago, IL
Period	06/05/07 → 11/05/07

Access to Document

10.1149/1.2790405

Cite this

@inproceedings{2e572892936c4669b21ef7906af946a1,

title = "Effects of TiCl4-based PECVD-Ti/CVD-TiN barrier layers on the BF2-doped Si for contact plug technology",

abstract = "We have performed the investigation of Ti/TiN barrier layers deposited by PECVD of Ti and CVD of TiN using TiCl4 as a reactant on a heavily boron doped Si substrate. High contact resistance arose from both the boron out-diffusion, and high chlorine content in the Ti film with respect to the relatively high, and low process temperatures of PECVD-Ti deposition, respectively. In the optimized PECVD-Ti process condition with the satisfied boron dose in the Si substrate, comparable yields can be achieved with that using the 110nm deep trench Dynamic Random Access Memory (DRAM) technology with PVD-Ti method. Furthermore, using PECVD-Ti/CVD-TiN method for the contact metallization, it can obtain a uniform thickness of liner in the hole-type contact with aspect ratio to 6.",

author = "Huang, {Tsai Yu} and Liang, {Wen Ping} and Su, {Kuo Hui} and Wu, {Chang Rong} and Lin, {Yu Chang} and Wakabayashi Satoshi and Lin, {Jeng Ping}",

year = "2007",

doi = "10.1149/1.2790405",

language = "英语",

isbn = "9781604238884",

series = "ECS Transactions",

number = "12",

pages = "15--20",

booktitle = "ECS Trancsactions - Thin Film Materials, Processes, and Reliability",

edition = "12",

note = "Thin Film Materials, Processes, and Reliability - 211th ECS Meeting ; Conference date: 06-05-2007 Through 11-05-2007",

}

Huang, TY, Liang, WP, Su, KH, Wu, CR, Lin, YC, Satoshi, W & Lin, JP 2007, Effects of TiCl₄-based PECVD-Ti/CVD-TiN barrier layers on the BF₂-doped Si for contact plug technology. in ECS Trancsactions - Thin Film Materials, Processes, and Reliability. 12 edn, ECS Transactions, no. 12, vol. 6, pp. 15-20, Thin Film Materials, Processes, and Reliability - 211th ECS Meeting, Chicago, IL, United States, 06/05/07. https://doi.org/10.1149/1.2790405

Effects of TiCl₄-based PECVD-Ti/CVD-TiN barrier layers on the BF₂-doped Si for contact plug technology. / Huang, Tsai Yu; Liang, Wen Ping; Su, Kuo Hui et al.
ECS Trancsactions - Thin Film Materials, Processes, and Reliability. 12. ed. 2007. p. 15-20 (ECS Transactions; Vol. 6, No. 12).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Huang, Tsai Yu

AU - Liang, Wen Ping

AU - Su, Kuo Hui

AU - Wu, Chang Rong

AU - Lin, Yu Chang

AU - Satoshi, Wakabayashi

AU - Lin, Jeng Ping

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AB - We have performed the investigation of Ti/TiN barrier layers deposited by PECVD of Ti and CVD of TiN using TiCl4 as a reactant on a heavily boron doped Si substrate. High contact resistance arose from both the boron out-diffusion, and high chlorine content in the Ti film with respect to the relatively high, and low process temperatures of PECVD-Ti deposition, respectively. In the optimized PECVD-Ti process condition with the satisfied boron dose in the Si substrate, comparable yields can be achieved with that using the 110nm deep trench Dynamic Random Access Memory (DRAM) technology with PVD-Ti method. Furthermore, using PECVD-Ti/CVD-TiN method for the contact metallization, it can obtain a uniform thickness of liner in the hole-type contact with aspect ratio to 6.

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