Efficiency Droop and Degradation in AlGaN-Based UVB Light-Emitting Diodes

Yi Tsung Chang; Mu Jen Lai; Rui Sen Liu; Shu Chang Wang; Xiong Zhang; Lin Jun Zhang; Yu Hsien Lin; Shiang Fu Huang; Lung Chien Chen; Ray Ming Lin

doi:10.3390/cryst12081082

Efficiency Droop and Degradation in AlGaN-Based UVB Light-Emitting Diodes

Yi Tsung Chang, Mu Jen Lai^*, Rui Sen Liu, Shu Chang Wang, Xiong Zhang, Lin Jun Zhang, Yu Hsien Lin, Shiang Fu Huang, Lung Chien Chen, Ray Ming Lin^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

3 Scopus citations

Abstract

In this study, we found that the current droop (J-droop) in AlGaN-based UVB light-emitting diodes was more obvious at higher temperatures, despite both the main and parasitic peaks undergoing monotonic decreases in their intensity upon an increase in the temperature. The slower temperature droop (T-droop) did not occur when the forward current was increased to temperatures greater than 298 K. After an aging time of 6000 h, the emission wavelengths did not undergo any obvious changes, while the intensity of the parasitic peak barely changed. Thus, the degradation in the light output power during long-term operation was not obviously correlated to the existence of the parasitic peak.

Original language	English
Article number	1082
Journal	Crystals
Volume	12
Issue number	8
DOIs	https://doi.org/10.3390/cryst12081082
State	Published - 08 2022

Bibliographical note

Publisher Copyright:
© 2022 by the authors.

Keywords

AlGaN
current droop
external quantum efficiency
light-emitting diodes
temperature droop
ultraviolet-B

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10.3390/cryst12081082

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title = "Efficiency Droop and Degradation in AlGaN-Based UVB Light-Emitting Diodes",

abstract = "In this study, we found that the current droop (J-droop) in AlGaN-based UVB light-emitting diodes was more obvious at higher temperatures, despite both the main and parasitic peaks undergoing monotonic decreases in their intensity upon an increase in the temperature. The slower temperature droop (T-droop) did not occur when the forward current was increased to temperatures greater than 298 K. After an aging time of 6000 h, the emission wavelengths did not undergo any obvious changes, while the intensity of the parasitic peak barely changed. Thus, the degradation in the light output power during long-term operation was not obviously correlated to the existence of the parasitic peak.",

keywords = "AlGaN, current droop, external quantum efficiency, light-emitting diodes, temperature droop, ultraviolet-B",

author = "Chang, {Yi Tsung} and Lai, {Mu Jen} and Liu, {Rui Sen} and Wang, {Shu Chang} and Xiong Zhang and Zhang, {Lin Jun} and Lin, {Yu Hsien} and Huang, {Shiang Fu} and Chen, {Lung Chien} and Lin, {Ray Ming}",

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doi = "10.3390/cryst12081082",

language = "英语",

volume = "12",

journal = "Crystals",

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TY - JOUR

T1 - Efficiency Droop and Degradation in AlGaN-Based UVB Light-Emitting Diodes

AU - Chang, Yi Tsung

AU - Lai, Mu Jen

AU - Liu, Rui Sen

AU - Wang, Shu Chang

AU - Zhang, Xiong

AU - Zhang, Lin Jun

AU - Lin, Yu Hsien

AU - Huang, Shiang Fu

AU - Chen, Lung Chien

AU - Lin, Ray Ming

PY - 2022/8

Y1 - 2022/8

N2 - In this study, we found that the current droop (J-droop) in AlGaN-based UVB light-emitting diodes was more obvious at higher temperatures, despite both the main and parasitic peaks undergoing monotonic decreases in their intensity upon an increase in the temperature. The slower temperature droop (T-droop) did not occur when the forward current was increased to temperatures greater than 298 K. After an aging time of 6000 h, the emission wavelengths did not undergo any obvious changes, while the intensity of the parasitic peak barely changed. Thus, the degradation in the light output power during long-term operation was not obviously correlated to the existence of the parasitic peak.

AB - In this study, we found that the current droop (J-droop) in AlGaN-based UVB light-emitting diodes was more obvious at higher temperatures, despite both the main and parasitic peaks undergoing monotonic decreases in their intensity upon an increase in the temperature. The slower temperature droop (T-droop) did not occur when the forward current was increased to temperatures greater than 298 K. After an aging time of 6000 h, the emission wavelengths did not undergo any obvious changes, while the intensity of the parasitic peak barely changed. Thus, the degradation in the light output power during long-term operation was not obviously correlated to the existence of the parasitic peak.

KW - AlGaN

KW - current droop

KW - external quantum efficiency

KW - light-emitting diodes

KW - temperature droop

KW - ultraviolet-B

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U2 - 10.3390/cryst12081082

DO - 10.3390/cryst12081082

M3 - 文章

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SN - 2073-4352

VL - 12

JO - Crystals

JF - Crystals

IS - 8

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ER -

Efficiency Droop and Degradation in AlGaN-Based UVB Light-Emitting Diodes

Abstract

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Keywords

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