Efficiency droop characteristics in InGaN-based near ultraviolet-to-blue light-emitting diodes

Sheng Fu Yu; Ray Ming Lin; Shoou Jinn Chang; Fu Chuan Chu

doi:10.1143/APEX.5.022102

Efficiency droop characteristics in InGaN-based near ultraviolet-to-blue light-emitting diodes

Sheng Fu Yu^*, Ray Ming Lin, Shoou Jinn Chang, Fu Chuan Chu

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

15 Scopus citations

Abstract

In this study, we prepared InGaN-based light-emitting diodes (LEDs) with peak emissions ranging from 400 to 445nm and investigated their efficiency droop characteristics at injection currents of up to 1 A. We found that the external quantum efficiencies (EQEs) changed dramatically when the critical current increased from 0 to 350 mA, but exhibited a similar negative slope upon increasing the current from 350mA to 1 A. The effects of piezoelectric polarization and different localized states in the active layer of the near UV-to-blue LEDs influenced the peak EQEs and the dramatic decays of the EQE droops at lower injection currents.

Original language	English
Article number	022102
Journal	Applied Physics Express
Volume	5
Issue number	2
DOIs	https://doi.org/10.1143/APEX.5.022102
State	Published - 02 2012

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title = "Efficiency droop characteristics in InGaN-based near ultraviolet-to-blue light-emitting diodes",

abstract = "In this study, we prepared InGaN-based light-emitting diodes (LEDs) with peak emissions ranging from 400 to 445nm and investigated their efficiency droop characteristics at injection currents of up to 1 A. We found that the external quantum efficiencies (EQEs) changed dramatically when the critical current increased from 0 to 350 mA, but exhibited a similar negative slope upon increasing the current from 350mA to 1 A. The effects of piezoelectric polarization and different localized states in the active layer of the near UV-to-blue LEDs influenced the peak EQEs and the dramatic decays of the EQE droops at lower injection currents.",

author = "Yu, \{Sheng Fu\} and Lin, \{Ray Ming\} and Chang, \{Shoou Jinn\} and Chu, \{Fu Chuan\}",

year = "2012",

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T1 - Efficiency droop characteristics in InGaN-based near ultraviolet-to-blue light-emitting diodes

AU - Yu, Sheng Fu

AU - Lin, Ray Ming

AU - Chang, Shoou Jinn

AU - Chu, Fu Chuan

PY - 2012/2

Y1 - 2012/2

N2 - In this study, we prepared InGaN-based light-emitting diodes (LEDs) with peak emissions ranging from 400 to 445nm and investigated their efficiency droop characteristics at injection currents of up to 1 A. We found that the external quantum efficiencies (EQEs) changed dramatically when the critical current increased from 0 to 350 mA, but exhibited a similar negative slope upon increasing the current from 350mA to 1 A. The effects of piezoelectric polarization and different localized states in the active layer of the near UV-to-blue LEDs influenced the peak EQEs and the dramatic decays of the EQE droops at lower injection currents.

AB - In this study, we prepared InGaN-based light-emitting diodes (LEDs) with peak emissions ranging from 400 to 445nm and investigated their efficiency droop characteristics at injection currents of up to 1 A. We found that the external quantum efficiencies (EQEs) changed dramatically when the critical current increased from 0 to 350 mA, but exhibited a similar negative slope upon increasing the current from 350mA to 1 A. The effects of piezoelectric polarization and different localized states in the active layer of the near UV-to-blue LEDs influenced the peak EQEs and the dramatic decays of the EQE droops at lower injection currents.

UR - https://www.scopus.com/pages/publications/84863142917

U2 - 10.1143/APEX.5.022102

DO - 10.1143/APEX.5.022102

M3 - 文章

AN - SCOPUS:84863142917

SN - 1882-0778

VL - 5

JO - Applied Physics Express

JF - Applied Physics Express

IS - 2

M1 - 022102

ER -

Efficiency droop characteristics in InGaN-based near ultraviolet-to-blue light-emitting diodes

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