Efficiency of quantum dot solar cell enhanced by improving quantum dots performance

H. L. Weng, H. Y. Ueng*, C. P. Lee

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

10 Scopus citations

Abstract

We propose an innovative description to provide a quantitative basis to enhance the conversion efficiency of InAs/GaAs quantum dot solar cells (QDSC). A theoretical approach and numerical simulation are used to improve the performance of the quantum dots and analyze the relevance to enhance the conversion efficiency. The absorption coefficient of QDs is determined in terms of dot material, dot size, size dispersion, and shape, which are used to obtain a better match between the absorption spectrum of QDs with the portion of the solar spectrum. Either increasing the surface density for raising the photocurrent or enlarging the dot size for matching well the solar spectrum is a trade-off issue. The influence of surface density, spacer thickness, and number of dot layers on the opencircuit voltage and efficiency is discussed in detail. Moreover, volume fraction can be taken as a balance reference for the counteracting effect between JSC and VOC.

Original languageEnglish
Pages (from-to)369-375
Number of pages7
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume212
Issue number2
DOIs
StatePublished - 02 2015

Bibliographical note

Publisher Copyright:
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords

  • InAs
  • Keywords GaAs
  • Quantum dots
  • Solar cells

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