Efficient CMOS rectifier for inductively power-harvested implants

Cihun Siyong Alex Gong; Jyun Wei Lu; Kai Wen Yao; Jr Yu Tsai; Muh Tian Shiue

doi:10.1109/EDSSC.2008.4760723

Efficient CMOS rectifier for inductively power-harvested implants

Cihun Siyong Alex Gong, Jyun Wei Lu, Kai Wen Yao, Jr Yu Tsai, Muh Tian Shiue

National Central University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

A fully integrated CMOS rectifier, intended for inductively powered electronic implants and featuring ultralow-loss characteristic, is presented. By making use of highperformance active diodes fulfilling almost ideal switching (zero forward voltage drop) and circuit to be provided with negative resistance, the proposed design is able to achieve an maximum conversion efficiency of more than 90% when designed in a 0.18-μm standard CMOS process, without any special device requiring additional manufacturing procedures. As a result, the proposed design dramatically reduces the production cost. Estimations in all aspects regarding the performance of the rectifier are given in this paper.

Original language	English
Title of host publication	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs	https://doi.org/10.1109/EDSSC.2008.4760723
State	Published - 2008
Externally published	Yes
Event	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China Duration: 08 12 2008 → 10 12 2008

Publication series

Name	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Conference

Conference	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/Territory	China
City	Hong Kong
Period	08/12/08 → 10/12/08

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10.1109/EDSSC.2008.4760723

Cite this

Gong, C. S. A., Lu, J. W., Yao, K. W., Tsai, J. Y., & Shiue, M. T. (2008). Efficient CMOS rectifier for inductively power-harvested implants. In 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC Article 4760723 (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC). https://doi.org/10.1109/EDSSC.2008.4760723

@inproceedings{2dc1b4bb9dc342bcb6651e618d559a71,

title = "Efficient CMOS rectifier for inductively power-harvested implants",

abstract = "A fully integrated CMOS rectifier, intended for inductively powered electronic implants and featuring ultralow-loss characteristic, is presented. By making use of highperformance active diodes fulfilling almost ideal switching (zero forward voltage drop) and circuit to be provided with negative resistance, the proposed design is able to achieve an maximum conversion efficiency of more than 90% when designed in a 0.18-μm standard CMOS process, without any special device requiring additional manufacturing procedures. As a result, the proposed design dramatically reduces the production cost. Estimations in all aspects regarding the performance of the rectifier are given in this paper.",

author = "Gong, {Cihun Siyong Alex} and Lu, {Jyun Wei} and Yao, {Kai Wen} and Tsai, {Jr Yu} and Shiue, {Muh Tian}",

year = "2008",

doi = "10.1109/EDSSC.2008.4760723",

language = "英语",

isbn = "9781424425402",

series = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",

booktitle = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",

note = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 08-12-2008 Through 10-12-2008",

}

Gong, CSA, Lu, JW, Yao, KW, Tsai, JY & Shiue, MT 2008, Efficient CMOS rectifier for inductively power-harvested implants. in 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC., 4760723, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Hong Kong, China, 08/12/08. https://doi.org/10.1109/EDSSC.2008.4760723

Efficient CMOS rectifier for inductively power-harvested implants. / Gong, Cihun Siyong Alex; Lu, Jyun Wei; Yao, Kai Wen et al.
2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 2008. 4760723 (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Efficient CMOS rectifier for inductively power-harvested implants

AU - Gong, Cihun Siyong Alex

AU - Lu, Jyun Wei

AU - Yao, Kai Wen

AU - Tsai, Jr Yu

AU - Shiue, Muh Tian

PY - 2008

Y1 - 2008

N2 - A fully integrated CMOS rectifier, intended for inductively powered electronic implants and featuring ultralow-loss characteristic, is presented. By making use of highperformance active diodes fulfilling almost ideal switching (zero forward voltage drop) and circuit to be provided with negative resistance, the proposed design is able to achieve an maximum conversion efficiency of more than 90% when designed in a 0.18-μm standard CMOS process, without any special device requiring additional manufacturing procedures. As a result, the proposed design dramatically reduces the production cost. Estimations in all aspects regarding the performance of the rectifier are given in this paper.

AB - A fully integrated CMOS rectifier, intended for inductively powered electronic implants and featuring ultralow-loss characteristic, is presented. By making use of highperformance active diodes fulfilling almost ideal switching (zero forward voltage drop) and circuit to be provided with negative resistance, the proposed design is able to achieve an maximum conversion efficiency of more than 90% when designed in a 0.18-μm standard CMOS process, without any special device requiring additional manufacturing procedures. As a result, the proposed design dramatically reduces the production cost. Estimations in all aspects regarding the performance of the rectifier are given in this paper.

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U2 - 10.1109/EDSSC.2008.4760723

DO - 10.1109/EDSSC.2008.4760723

M3 - 会议稿件

AN - SCOPUS:63249091118

SN - 9781424425402

T3 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

BT - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

T2 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Y2 - 8 December 2008 through 10 December 2008

ER -

Efficient CMOS rectifier for inductively power-harvested implants

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