Electric property improvement and boron penetration suppression in metal-oxide-Si capacitors by amorphous-Si gate electrode and two-step nitridation
- Jung Hsiang Lee
- , Wu Shiung Feng
- , Tzann Cherng Juang
- , Kuei Shu Chang-Liao*
*Corresponding author for this work
- National Taiwan University
- National Tsing Hua University
Research output: Contribution to journal › Conference article › peer-review
2
Scopus
citations