Electric property improvement and boron penetration suppression in metal-oxide-Si capacitors by amorphous-Si gate electrode and two-step nitridation

Jung Hsiang Lee, Wu Shiung Feng, Tzann Cherng Juang, Kuei Shu Chang-Liao*

*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Fingerprint

Dive into the research topics of 'Electric property improvement and boron penetration suppression in metal-oxide-Si capacitors by amorphous-Si gate electrode and two-step nitridation'. Together they form a unique fingerprint.

Material Science