Electric stress effect on DC-RF performance degradation of 0.18-μm MOSFETs

C. C. Chen; H. L. Kao; Albert Chin

doi:10.1002/mop.21813

Electric stress effect on DC-RF performance degradation of 0.18-μm MOSFETs

C. C. Chen^*, H. L. Kao, Albert Chin

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

We have studied the electric stress effect on DC-RF performance degradation of 64 gate fingers 0.18-μm RF MOSFETs. The fresh devices show good transistor's DC to RF characteristics of small sub-threshold swing of 85 mV/dec, large drive current (I_d.sat) of 500 μA/μm, high unity-gain cut-off frequency (f_t) of 47 GHz, and low minimum noise figure (NF_min) of 1.3 dB at 10 GHz. The hot carrier stress for 20% I _d.sat reduction causes DC g_m and r_o degradation as well as the lower RF current gain by 2.35 dB, f, reduction to 35.7 GHz, increasing NF_minto 1.7 dB at 10 GHz and poor output impedance matching.

Original language	English
Pages (from-to)	1916-1919
Number of pages	4
Journal	Microwave and Optical Technology Letters
Volume	48
Issue number	10
DOIs	https://doi.org/10.1002/mop.21813
State	Published - 10 2006
Externally published	Yes

Keywords

Current gain
I-V
NF
S parameters
Stress

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10.1002/mop.21813

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title = "Electric stress effect on DC-RF performance degradation of 0.18-μm MOSFETs",

abstract = "We have studied the electric stress effect on DC-RF performance degradation of 64 gate fingers 0.18-μm RF MOSFETs. The fresh devices show good transistor's DC to RF characteristics of small sub-threshold swing of 85 mV/dec, large drive current (Id.sat) of 500 μA/μm, high unity-gain cut-off frequency (ft) of 47 GHz, and low minimum noise figure (NFmin) of 1.3 dB at 10 GHz. The hot carrier stress for 20% I d.sat reduction causes DC gm and ro degradation as well as the lower RF current gain by 2.35 dB, f, reduction to 35.7 GHz, increasing NFminto 1.7 dB at 10 GHz and poor output impedance matching.",

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T1 - Electric stress effect on DC-RF performance degradation of 0.18-μm MOSFETs

AU - Chen, C. C.

AU - Kao, H. L.

AU - Chin, Albert

PY - 2006/10

Y1 - 2006/10

N2 - We have studied the electric stress effect on DC-RF performance degradation of 64 gate fingers 0.18-μm RF MOSFETs. The fresh devices show good transistor's DC to RF characteristics of small sub-threshold swing of 85 mV/dec, large drive current (Id.sat) of 500 μA/μm, high unity-gain cut-off frequency (ft) of 47 GHz, and low minimum noise figure (NFmin) of 1.3 dB at 10 GHz. The hot carrier stress for 20% I d.sat reduction causes DC gm and ro degradation as well as the lower RF current gain by 2.35 dB, f, reduction to 35.7 GHz, increasing NFminto 1.7 dB at 10 GHz and poor output impedance matching.

AB - We have studied the electric stress effect on DC-RF performance degradation of 64 gate fingers 0.18-μm RF MOSFETs. The fresh devices show good transistor's DC to RF characteristics of small sub-threshold swing of 85 mV/dec, large drive current (Id.sat) of 500 μA/μm, high unity-gain cut-off frequency (ft) of 47 GHz, and low minimum noise figure (NFmin) of 1.3 dB at 10 GHz. The hot carrier stress for 20% I d.sat reduction causes DC gm and ro degradation as well as the lower RF current gain by 2.35 dB, f, reduction to 35.7 GHz, increasing NFminto 1.7 dB at 10 GHz and poor output impedance matching.

KW - Current gain

KW - I-V

KW - NF

KW - S parameters

KW - Stress

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DO - 10.1002/mop.21813

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VL - 48

SP - 1916

EP - 1919

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 10

ER -

Electric stress effect on DC-RF performance degradation of 0.18-μm MOSFETs

Abstract

Keywords

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