Electrical and interfacial characteristics of ultrathin ZrO2 gate dielectrics on strain compensated SiGeC/Si heterostructure

R. Mahapatra, Je Hun Lee, S. Maikap, G. S. Kar, A. Dhar, Nong M. Hwang, Doh Y. Kim, B. K. Mathur, S. K. Ray*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

42 Scopus citations

Abstract

The electrical and interfacial characteristics of ultrathin ZrO2 gate dielectrics were discussed. Dielectric constant of 17.5 for ZrO2 and 7.0 for an interfacial-silicate layer were calculated. High-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy were used for the analysis.

Original languageEnglish
Pages (from-to)2320-2322
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number14
DOIs
StatePublished - 07 04 2003
Externally publishedYes

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