Abstract
The electrical and interfacial characteristics of ultrathin ZrO2 gate dielectrics were discussed. Dielectric constant of 17.5 for ZrO2 and 7.0 for an interfacial-silicate layer were calculated. High-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy were used for the analysis.
Original language | English |
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Pages (from-to) | 2320-2322 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 14 |
DOIs | |
State | Published - 07 04 2003 |
Externally published | Yes |