Electrical and interfacial characteristics of ultrathin ZrO2 gate dielectrics on strain compensated SiGeC/Si heterostructure

R. Mahapatra; Je Hun Lee; S. Maikap; G. S. Kar; A. Dhar; Nong M. Hwang; Doh Y. Kim; B. K. Mathur; S. K. Ray

doi:10.1063/1.1566480

Electrical and interfacial characteristics of ultrathin ZrO₂ gate dielectrics on strain compensated SiGeC/Si heterostructure

R. Mahapatra
, Je Hun Lee
, S. Maikap
, G. S. Kar
, A. Dhar
, Nong M. Hwang
, Doh Y. Kim
, B. K. Mathur
, S. K. Ray^*

^*Corresponding author for this work

Indian Institute of Technology Kharagpur
Seoul National University

Research output: Contribution to journal › Journal Article › peer-review

42 Scopus citations

Abstract

The electrical and interfacial characteristics of ultrathin ZrO₂ gate dielectrics were discussed. Dielectric constant of 17.5 for ZrO₂ and 7.0 for an interfacial-silicate layer were calculated. High-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy were used for the analysis.

Original language	English
Pages (from-to)	2320-2322
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	14
DOIs	https://doi.org/10.1063/1.1566480
State	Published - 07 04 2003
Externally published	Yes

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title = "Electrical and interfacial characteristics of ultrathin ZrO2 gate dielectrics on strain compensated SiGeC/Si heterostructure",

abstract = "The electrical and interfacial characteristics of ultrathin ZrO2 gate dielectrics were discussed. Dielectric constant of 17.5 for ZrO2 and 7.0 for an interfacial-silicate layer were calculated. High-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy were used for the analysis.",

author = "R. Mahapatra and Lee, \{Je Hun\} and S. Maikap and Kar, \{G. S.\} and A. Dhar and Hwang, \{Nong M.\} and Kim, \{Doh Y.\} and Mathur, \{B. K.\} and Ray, \{S. K.\}",

year = "2003",

month = apr,

day = "7",

doi = "10.1063/1.1566480",

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volume = "82",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Electrical and interfacial characteristics of ultrathin ZrO2 gate dielectrics on strain compensated SiGeC/Si heterostructure

AU - Mahapatra, R.

AU - Lee, Je Hun

AU - Maikap, S.

AU - Kar, G. S.

AU - Dhar, A.

AU - Hwang, Nong M.

AU - Kim, Doh Y.

AU - Mathur, B. K.

AU - Ray, S. K.

PY - 2003/4/7

Y1 - 2003/4/7

N2 - The electrical and interfacial characteristics of ultrathin ZrO2 gate dielectrics were discussed. Dielectric constant of 17.5 for ZrO2 and 7.0 for an interfacial-silicate layer were calculated. High-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy were used for the analysis.

AB - The electrical and interfacial characteristics of ultrathin ZrO2 gate dielectrics were discussed. Dielectric constant of 17.5 for ZrO2 and 7.0 for an interfacial-silicate layer were calculated. High-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy were used for the analysis.

UR - https://www.scopus.com/pages/publications/0345373809

U2 - 10.1063/1.1566480

DO - 10.1063/1.1566480

M3 - 文章

AN - SCOPUS:0345373809

SN - 0003-6951

VL - 82

SP - 2320

EP - 2322

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Electrical and interfacial characteristics of ultrathin ZrO₂ gate dielectrics on strain compensated SiGeC/Si heterostructure

Abstract

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