Electrical and physical characteristics of the high-K Tb2O 3 (terbium) dielectric deposited on the polycrystalline silicon

Chyuan Haur Kao; Hsian Chen; Kung Shao Chen; Pei Lun Lai; Shih Nan Cheng; Chien Jung Liao; Hsin Yuan Wang; Chih Hung Hsieh; Chia Han Lin

doi:10.1109/ICSICT.2010.5667535

Electrical and physical characteristics of the high-K Tb₂O ₃ (terbium) dielectric deposited on the polycrystalline silicon

Chyuan Haur Kao^*, Hsian Chen, Kung Shao Chen, Pei Lun Lai, Shih Nan Cheng, Chien Jung Liao, Hsin Yuan Wang, Chih Hung Hsieh, Chia Han Lin

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages	1039-1041
Number of pages	3
DOIs	https://doi.org/10.1109/ICSICT.2010.5667535
State	Published - 2010
Event	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 01 11 2010 → 04 11 2010

Publication series

Name	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	01/11/10 → 04/11/10

Access to Document

10.1109/ICSICT.2010.5667535

Cite this

Kao, C. H., Chen, H., Chen, K. S., Lai, P. L., Cheng, S. N., Liao, C. J., Wang, H. Y., Hsieh, C. H., & Lin, C. H. (2010). Electrical and physical characteristics of the high-K Tb₂O ₃ (terbium) dielectric deposited on the polycrystalline silicon. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1039-1041). Article 5667535 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667535

Kao, Chyuan Haur ; Chen, Hsian ; Chen, Kung Shao et al. / Electrical and physical characteristics of the high-K Tb₂O ₃ (terbium) dielectric deposited on the polycrystalline silicon. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. pp. 1039-1041 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{4bc1b68f0b4b47a5bf526e0d47c45663,

title = "Electrical and physical characteristics of the high-K Tb2O 3 (terbium) dielectric deposited on the polycrystalline silicon",

author = "Kao, {Chyuan Haur} and Hsian Chen and Chen, {Kung Shao} and Lai, {Pei Lun} and Cheng, {Shih Nan} and Liao, {Chien Jung} and Wang, {Hsin Yuan} and Hsieh, {Chih Hung} and Lin, {Chia Han}",

year = "2010",

doi = "10.1109/ICSICT.2010.5667535",

language = "英语",

isbn = "9781424457984",

series = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

pages = "1039--1041",

booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 01-11-2010 Through 04-11-2010",

}

Kao, CH, Chen, H, Chen, KS, Lai, PL, Cheng, SN, Liao, CJ, Wang, HY, Hsieh, CH & Lin, CH 2010, Electrical and physical characteristics of the high-K Tb₂O ₃ (terbium) dielectric deposited on the polycrystalline silicon. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667535, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 1039-1041, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 01/11/10. https://doi.org/10.1109/ICSICT.2010.5667535

Electrical and physical characteristics of the high-K Tb₂O ₃ (terbium) dielectric deposited on the polycrystalline silicon. / Kao, Chyuan Haur; Chen, Hsian; Chen, Kung Shao et al.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1039-1041 5667535 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electrical and physical characteristics of the high-K Tb2O 3 (terbium) dielectric deposited on the polycrystalline silicon

AU - Kao, Chyuan Haur

AU - Chen, Hsian

AU - Chen, Kung Shao

AU - Lai, Pei Lun

AU - Cheng, Shih Nan

AU - Liao, Chien Jung

AU - Wang, Hsin Yuan

AU - Hsieh, Chih Hung

AU - Lin, Chia Han

PY - 2010

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U2 - 10.1109/ICSICT.2010.5667535

DO - 10.1109/ICSICT.2010.5667535

M3 - 会议稿件

AN - SCOPUS:78751498345

SN - 9781424457984

T3 - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 1039

EP - 1041

BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

Y2 - 1 November 2010 through 4 November 2010

ER -

Kao CH, Chen H, Chen KS, Lai PL, Cheng SN, Liao CJ et al. Electrical and physical characteristics of the high-K Tb₂O ₃ (terbium) dielectric deposited on the polycrystalline silicon. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1039-1041. 5667535. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2010.5667535