Electrical and reliability characteristics of high-κ HoTiO3 α-InGaZnO thin-film transistors

Tung Ming Pan; Ching Hung Chen; Jiang Hung Liu; Jim Long Her; Keiichi Koyama

doi:10.1109/LED.2013.2287349

Electrical and reliability characteristics of high-κ HoTiO3 α-InGaZnO thin-film transistors

Tung Ming Pan, Ching Hung Chen, Jiang Hung Liu, Jim Long Her, Keiichi Koyama

Research output: Contribution to journal › Journal Article › peer-review

32 Scopus citations

Abstract

In this letter, we investigated the electrical and reliability characteristics of high-κ HoTiO₃ amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) devices. The α-IGZO TFT device incorporating an HoTiO₃ dielectric exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.12 V, a high field-effect mobility of 21.4 cm²/Vs, a small subthreshold swing of 160 mV/decade, and a high I_ON/I_OFF current ratio of 1.3 × 10⁸. These results are attributed to the incorporation of TiO_x into the Ho₂O₃ film forming the smooth surface roughness and thus reducing the oxygen vacancies. Furthermore, the threshold voltage stability of HoTiO3 α-IGZO TFT was studied under both positive and negative bias stress conditions.

Original language	English
Article number	6678542
Pages (from-to)	66-68
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	1
DOIs	https://doi.org/10.1109/LED.2013.2287349
State	Published - 01 2014

Keywords

Amorphous indium
HoTiO
gallium
thin-film transistor (TFT)
zinc oxide (α-IGZO)

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title = "Electrical and reliability characteristics of high-κ HoTiO3 α-InGaZnO thin-film transistors",

abstract = "In this letter, we investigated the electrical and reliability characteristics of high-κ HoTiO3 amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) devices. The α-IGZO TFT device incorporating an HoTiO3 dielectric exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.12 V, a high field-effect mobility of 21.4 cm2/Vs, a small subthreshold swing of 160 mV/decade, and a high ION/IOFF current ratio of 1.3 × 108. These results are attributed to the incorporation of TiOx into the Ho2O3 film forming the smooth surface roughness and thus reducing the oxygen vacancies. Furthermore, the threshold voltage stability of HoTiO3 α-IGZO TFT was studied under both positive and negative bias stress conditions.",

keywords = "Amorphous indium, HoTiO, gallium, thin-film transistor (TFT), zinc oxide (α-IGZO)",

author = "Pan, {Tung Ming} and Chen, {Ching Hung} and Liu, {Jiang Hung} and Her, {Jim Long} and Keiichi Koyama",

year = "2014",

month = jan,

doi = "10.1109/LED.2013.2287349",

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AU - Chen, Ching Hung

AU - Liu, Jiang Hung

AU - Her, Jim Long

AU - Koyama, Keiichi

PY - 2014/1

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N2 - In this letter, we investigated the electrical and reliability characteristics of high-κ HoTiO3 amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) devices. The α-IGZO TFT device incorporating an HoTiO3 dielectric exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.12 V, a high field-effect mobility of 21.4 cm2/Vs, a small subthreshold swing of 160 mV/decade, and a high ION/IOFF current ratio of 1.3 × 108. These results are attributed to the incorporation of TiOx into the Ho2O3 film forming the smooth surface roughness and thus reducing the oxygen vacancies. Furthermore, the threshold voltage stability of HoTiO3 α-IGZO TFT was studied under both positive and negative bias stress conditions.

AB - In this letter, we investigated the electrical and reliability characteristics of high-κ HoTiO3 amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) devices. The α-IGZO TFT device incorporating an HoTiO3 dielectric exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.12 V, a high field-effect mobility of 21.4 cm2/Vs, a small subthreshold swing of 160 mV/decade, and a high ION/IOFF current ratio of 1.3 × 108. These results are attributed to the incorporation of TiOx into the Ho2O3 film forming the smooth surface roughness and thus reducing the oxygen vacancies. Furthermore, the threshold voltage stability of HoTiO3 α-IGZO TFT was studied under both positive and negative bias stress conditions.

KW - Amorphous indium

KW - HoTiO

KW - gallium

KW - thin-film transistor (TFT)

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Electrical and reliability characteristics of high-κ HoTiO3 α-InGaZnO thin-film transistors

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Keywords

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