Abstract
The properties of low-temperature grown GaAs are studied via the electrical characterization of p-i-n structures with part of the intrinsic layer grown at 300°C. Comparisons are made between the low-temperature and normally grown samples. The current of the low-temperature sample is about two orders of magnitude higher than that of the normally grown sample in both forward and reverse bias. From temperature-dependent analysis, the leakage current of the low-temperature sample is contributed by the recombination current through defect levels around the midgap, from which a recombination lifetime of 9.4×10-12 s was obtained. By using admittance spectroscopy we observed a dominant electron level at 0.60 eV with a corresponding capture cross section of 1.0×10-13 cm2 that was not observed in the normally grown sample; thus it is believed to be introduced by the As-rich low-temperature layer.
Original language | English |
---|---|
Pages (from-to) | 1255-1258 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 81 |
Issue number | 3 |
DOIs | |
State | Published - 01 02 1997 |
Externally published | Yes |