@inproceedings{385a35d5e3bc45c3bd53298f30cfb8bb,
title = "Electrical characteristics of erbium oxide films on silicon substrate by reactive RF sputtering for different metal gate",
abstract = "Erbium oxide film was deposited on Si substrate by reactive RF-sputtering from an erbium target for TaN and Al gate electrode. We found that Er 2O3 dielectric with TaN electrode exhibits excellent electrical properties such as significantly a lower leakage current, higher capacitance value and thermal stability. This Er2O3 gate dielectric appears to be very promising for future ULSI devices. Copyright The Electrochemical Society.",
author = "Pan, {Tung Ming} and Chen, {Chun Lin} and Lee, {Jian Der} and Hsieh, {Chun I.} and Lai, {Chao Sung}",
year = "2006",
language = "英语",
isbn = "1566774381",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "255--260",
booktitle = "Dielectrics for Nanosystems II",
edition = "1",
note = "2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society ; Conference date: 07-05-2006 Through 12-05-2006",
}