Electrical characteristics of GdTiO3 gate dielectric for amorphous InGaZnO thin-film transistors

Jim Long Her; Tung Ming Pan; Jiang Hung Liu; Hong Jun Wang; Ching Hung Chen; Keiichi Koyama

doi:10.1016/j.tsf.2014.08.021

Electrical characteristics of GdTiO₃ gate dielectric for amorphous InGaZnO thin-film transistors

Jim Long Her, Tung Ming Pan^*, Jiang Hung Liu, Hong Jun Wang, Ching Hung Chen, Keiichi Koyama

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

7 Scopus citations

Abstract

In this article, we studied the structural properties and electrical characteristics of GdTiO₃ gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) applications. The a-IGZO TFT device featuring the GdTiO₃ gate dielectric exhibited better electrical characteristics, including a small threshold voltage of 0.14 V, a large field-effect mobility of 32.3 cm² /V-s, a high I_on /I_off current ratio of 4.2 ×10⁸ , and a low subthreshold swing of 213 mV/decade. Furthermore, the electrical instability of GdTiO₃ a-IGZO TFTs was investigated under both positive gate-bias stress (PGBS) and negative gate-bias stress (NGBS) conditions. The electron charge trapping in the gate dielectric dominates the PGBS degradation, while the oxygen vacancies control the NGBS degradation.

Original language	English
Pages (from-to)	6-9
Number of pages	4
Journal	Thin Solid Films
Volume	569
Issue number	C
DOIs	https://doi.org/10.1016/j.tsf.2014.08.021
State	Published - 2014

Bibliographical note

Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.

Keywords

Amorphous indium-gallium-zinc oxide
Gadolinum titanium oxide
Negative gate-bias stress
Positive gate-bias stress
Thin-film transistors

Access to Document

10.1016/j.tsf.2014.08.021

Cite this

@article{dc08afb7be7b48928342daee52ccef95,

title = "Electrical characteristics of GdTiO3 gate dielectric for amorphous InGaZnO thin-film transistors",

abstract = "In this article, we studied the structural properties and electrical characteristics of GdTiO3 gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) applications. The a-IGZO TFT device featuring the GdTiO3 gate dielectric exhibited better electrical characteristics, including a small threshold voltage of 0.14 V, a large field-effect mobility of 32.3 cm2 /V-s, a high Ion /Ioff current ratio of 4.2 ×108 , and a low subthreshold swing of 213 mV/decade. Furthermore, the electrical instability of GdTiO3 a-IGZO TFTs was investigated under both positive gate-bias stress (PGBS) and negative gate-bias stress (NGBS) conditions. The electron charge trapping in the gate dielectric dominates the PGBS degradation, while the oxygen vacancies control the NGBS degradation.",

keywords = "Amorphous indium-gallium-zinc oxide, Gadolinum titanium oxide, Negative gate-bias stress, Positive gate-bias stress, Thin-film transistors",

author = "Her, {Jim Long} and Pan, {Tung Ming} and Liu, {Jiang Hung} and Wang, {Hong Jun} and Chen, {Ching Hung} and Keiichi Koyama",

year = "2014",

doi = "10.1016/j.tsf.2014.08.021",

language = "英语",

volume = "569",

pages = "6--9",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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}

TY - JOUR

T1 - Electrical characteristics of GdTiO3 gate dielectric for amorphous InGaZnO thin-film transistors

AU - Her, Jim Long

AU - Pan, Tung Ming

AU - Liu, Jiang Hung

AU - Wang, Hong Jun

AU - Chen, Ching Hung

AU - Koyama, Keiichi

PY - 2014

Y1 - 2014

N2 - In this article, we studied the structural properties and electrical characteristics of GdTiO3 gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) applications. The a-IGZO TFT device featuring the GdTiO3 gate dielectric exhibited better electrical characteristics, including a small threshold voltage of 0.14 V, a large field-effect mobility of 32.3 cm2 /V-s, a high Ion /Ioff current ratio of 4.2 ×108 , and a low subthreshold swing of 213 mV/decade. Furthermore, the electrical instability of GdTiO3 a-IGZO TFTs was investigated under both positive gate-bias stress (PGBS) and negative gate-bias stress (NGBS) conditions. The electron charge trapping in the gate dielectric dominates the PGBS degradation, while the oxygen vacancies control the NGBS degradation.

AB - In this article, we studied the structural properties and electrical characteristics of GdTiO3 gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) applications. The a-IGZO TFT device featuring the GdTiO3 gate dielectric exhibited better electrical characteristics, including a small threshold voltage of 0.14 V, a large field-effect mobility of 32.3 cm2 /V-s, a high Ion /Ioff current ratio of 4.2 ×108 , and a low subthreshold swing of 213 mV/decade. Furthermore, the electrical instability of GdTiO3 a-IGZO TFTs was investigated under both positive gate-bias stress (PGBS) and negative gate-bias stress (NGBS) conditions. The electron charge trapping in the gate dielectric dominates the PGBS degradation, while the oxygen vacancies control the NGBS degradation.

KW - Amorphous indium-gallium-zinc oxide

KW - Gadolinum titanium oxide

KW - Negative gate-bias stress

KW - Positive gate-bias stress

KW - Thin-film transistors

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DO - 10.1016/j.tsf.2014.08.021

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