Electrical characterization of 13 Å in situ steam-generated oxynitride gate dielectrics

Tung Ming Pan

doi:10.1149/1.2154107

Electrical characterization of 13 Å in situ steam-generated oxynitride gate dielectrics

Tung Ming Pan^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

Ultrathin oxynitride gate dielectrics of similar thickness (∼1.3nm) processed by an in situ steam-generated (ISSG), an ISSG with NO rapid thermal processing (RTP) treatment (ISSG-NO), and an ISSG with O₂ RTP treatment (ISSG-O₂) are investigated. The results demonstrate that ISSG-NO gate dielectrics exhibit superior interface properties, reduced leakage current, and improved reliability compared to other gate dielectrics. The ISSG-NO oxynitride film is an attractive candidate as the gate dielectrics in 90 nm and possibly beyond for complementary metal oxide semiconductor technologies.

Original language	English
Pages (from-to)	G66-G68
Journal	Electrochemical and Solid-State Letters
Volume	9
Issue number	2
DOIs	https://doi.org/10.1149/1.2154107
State	Published - 2006

Access to Document

10.1149/1.2154107

Cite this

@article{801dcdd5d3d24f15add1118c36186f8a,

title = "Electrical characterization of 13 {\AA} in situ steam-generated oxynitride gate dielectrics",

abstract = "Ultrathin oxynitride gate dielectrics of similar thickness (∼1.3nm) processed by an in situ steam-generated (ISSG), an ISSG with NO rapid thermal processing (RTP) treatment (ISSG-NO), and an ISSG with O2 RTP treatment (ISSG-O2) are investigated. The results demonstrate that ISSG-NO gate dielectrics exhibit superior interface properties, reduced leakage current, and improved reliability compared to other gate dielectrics. The ISSG-NO oxynitride film is an attractive candidate as the gate dielectrics in 90 nm and possibly beyond for complementary metal oxide semiconductor technologies.",

author = "Pan, {Tung Ming}",

year = "2006",

doi = "10.1149/1.2154107",

language = "英语",

volume = "9",

pages = "G66--G68",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "2",

}

TY - JOUR

T1 - Electrical characterization of 13 Å in situ steam-generated oxynitride gate dielectrics

AU - Pan, Tung Ming

PY - 2006

Y1 - 2006

N2 - Ultrathin oxynitride gate dielectrics of similar thickness (∼1.3nm) processed by an in situ steam-generated (ISSG), an ISSG with NO rapid thermal processing (RTP) treatment (ISSG-NO), and an ISSG with O2 RTP treatment (ISSG-O2) are investigated. The results demonstrate that ISSG-NO gate dielectrics exhibit superior interface properties, reduced leakage current, and improved reliability compared to other gate dielectrics. The ISSG-NO oxynitride film is an attractive candidate as the gate dielectrics in 90 nm and possibly beyond for complementary metal oxide semiconductor technologies.

AB - Ultrathin oxynitride gate dielectrics of similar thickness (∼1.3nm) processed by an in situ steam-generated (ISSG), an ISSG with NO rapid thermal processing (RTP) treatment (ISSG-NO), and an ISSG with O2 RTP treatment (ISSG-O2) are investigated. The results demonstrate that ISSG-NO gate dielectrics exhibit superior interface properties, reduced leakage current, and improved reliability compared to other gate dielectrics. The ISSG-NO oxynitride film is an attractive candidate as the gate dielectrics in 90 nm and possibly beyond for complementary metal oxide semiconductor technologies.

UR - http://www.scopus.com/inward/record.url?scp=33645515563&partnerID=8YFLogxK

U2 - 10.1149/1.2154107

DO - 10.1149/1.2154107

M3 - 文章

AN - SCOPUS:33645515563

SN - 1099-0062

VL - 9

SP - G66-G68

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Electrical characterization of 13 Å in situ steam-generated oxynitride gate dielectrics

Abstract

Access to Document

Other files and links

Fingerprint

Cite this