Electrical characterization of AIN/Si(111) interface

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work investigates the interface of AlN/Si(111) by Hall and thermal electrical measurement. The results show that a p-type conducting layer was unintentionally formed at the interface.

Original languageEnglish
Title of host publication2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
DOIs
StatePublished - 2007
Event2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM - Seoul, Korea, Republic of
Duration: 26 08 200731 08 2007

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Conference

Conference2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
Country/TerritoryKorea, Republic of
CitySeoul
Period26/08/0731/08/07

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