Electrical characterization of AlN/Si(111) interface

  • C. Y. Tseng
  • , W. C. Lien
  • , Y. N. Wang
  • , N. C. Chen*
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work investigates the interface of AlN/Si(111) by Hall and thermal electrical measurement. The results show that a p-type conducting layer was unintentionally formed at the interface.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
PublisherOptical Society of America
ISBN (Print)1424411742, 9781424411740
StatePublished - 2007
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 - Seoul, Korea, Republic of
Duration: 26 08 200726 08 2007

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
Country/TerritoryKorea, Republic of
CitySeoul
Period26/08/0726/08/07

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