Electrical characterization of Si/Si1-xGex/Si quantum well heterostructures using a MOS capacitor

S. Maikap*, L. K. Bera, S. K. Ray, S. John, S. K. Banerjee, C. K. Maiti

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

7 Scopus citations

Abstract

Ultra-thin oxides (<100 angstroms) have been grown on strained Si/Si1-xGex/Si layers at a low temperature using microwave O2- and NO-plasma. Metal-oxide-semiconductor (MOS) capacitors fabricated using these oxides have been used for the determination of the hole density in the Si-cap and the Si0.8Ge0.2-channel. The valence band discontinuity (ΔEv) at the Si/Si0.8Ge0.2 heterointerface has been extracted from the carrier confinement characteristics of the quantum well. Capacitance-voltage (C-V) profiling has been used to measure the apparent doping profile and thickness of the unconsumed Si-cap layer. Fowler-Nordheim (F-N) constant current stressing shows that NO-plasma grown oxides have an improved charge trapping behavior over the O2-plasma grown oxides.

Original languageEnglish
Pages (from-to)1029-1034
Number of pages6
JournalSolid-State Electronics
Volume44
Issue number6
DOIs
StatePublished - 01 06 2000
Externally publishedYes

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