Abstract
Ultra-thin oxides (<100 angstroms) have been grown on strained Si/Si1-xGex/Si layers at a low temperature using microwave O2- and NO-plasma. Metal-oxide-semiconductor (MOS) capacitors fabricated using these oxides have been used for the determination of the hole density in the Si-cap and the Si0.8Ge0.2-channel. The valence band discontinuity (ΔEv) at the Si/Si0.8Ge0.2 heterointerface has been extracted from the carrier confinement characteristics of the quantum well. Capacitance-voltage (C-V) profiling has been used to measure the apparent doping profile and thickness of the unconsumed Si-cap layer. Fowler-Nordheim (F-N) constant current stressing shows that NO-plasma grown oxides have an improved charge trapping behavior over the O2-plasma grown oxides.
Original language | English |
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Pages (from-to) | 1029-1034 |
Number of pages | 6 |
Journal | Solid-State Electronics |
Volume | 44 |
Issue number | 6 |
DOIs | |
State | Published - 01 06 2000 |
Externally published | Yes |