Electrical characterization of Si/Si1-xGex/Si quantum well heterostructures using a MOS capacitor

S. Maikap; L. K. Bera; S. K. Ray; S. John; S. K. Banerjee; C. K. Maiti

doi:10.1016/S0038-1101(99)00327-5

Electrical characterization of Si/Si_1-xGe_x/Si quantum well heterostructures using a MOS capacitor

S. Maikap^*
, L. K. Bera
, S. K. Ray
, S. John
, S. K. Banerjee
, C. K. Maiti

^*Corresponding author for this work

Indian Institute of Technology Kharagpur
Texas Instruments
University of Texas at Austin

Research output: Contribution to journal › Journal Article › peer-review

8 Scopus citations

Abstract

Ultra-thin oxides (<100 angstroms) have been grown on strained Si/Si_1-xGe_x/Si layers at a low temperature using microwave O₂- and NO-plasma. Metal-oxide-semiconductor (MOS) capacitors fabricated using these oxides have been used for the determination of the hole density in the Si-cap and the Si_0.8Ge_0.2-channel. The valence band discontinuity (ΔE_v) at the Si/Si_0.8Ge_0.2 heterointerface has been extracted from the carrier confinement characteristics of the quantum well. Capacitance-voltage (C-V) profiling has been used to measure the apparent doping profile and thickness of the unconsumed Si-cap layer. Fowler-Nordheim (F-N) constant current stressing shows that NO-plasma grown oxides have an improved charge trapping behavior over the O₂-plasma grown oxides.

Original language	English
Pages (from-to)	1029-1034
Number of pages	6
Journal	Solid-State Electronics
Volume	44
Issue number	6
DOIs	https://doi.org/10.1016/S0038-1101(99)00327-5
State	Published - 01 06 2000
Externally published	Yes

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10.1016/S0038-1101(99)00327-5

Cite this

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title = "Electrical characterization of Si/Si1-xGex/Si quantum well heterostructures using a MOS capacitor",

abstract = "Ultra-thin oxides (<100 angstroms) have been grown on strained Si/Si1-xGex/Si layers at a low temperature using microwave O2- and NO-plasma. Metal-oxide-semiconductor (MOS) capacitors fabricated using these oxides have been used for the determination of the hole density in the Si-cap and the Si0.8Ge0.2-channel. The valence band discontinuity (ΔEv) at the Si/Si0.8Ge0.2 heterointerface has been extracted from the carrier confinement characteristics of the quantum well. Capacitance-voltage (C-V) profiling has been used to measure the apparent doping profile and thickness of the unconsumed Si-cap layer. Fowler-Nordheim (F-N) constant current stressing shows that NO-plasma grown oxides have an improved charge trapping behavior over the O2-plasma grown oxides.",

author = "S. Maikap and Bera, \{L. K.\} and Ray, \{S. K.\} and S. John and Banerjee, \{S. K.\} and Maiti, \{C. K.\}",

year = "2000",

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doi = "10.1016/S0038-1101(99)00327-5",

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T1 - Electrical characterization of Si/Si1-xGex/Si quantum well heterostructures using a MOS capacitor

AU - Maikap, S.

AU - Bera, L. K.

AU - Ray, S. K.

AU - John, S.

AU - Banerjee, S. K.

AU - Maiti, C. K.

PY - 2000/6/1

Y1 - 2000/6/1

N2 - Ultra-thin oxides (<100 angstroms) have been grown on strained Si/Si1-xGex/Si layers at a low temperature using microwave O2- and NO-plasma. Metal-oxide-semiconductor (MOS) capacitors fabricated using these oxides have been used for the determination of the hole density in the Si-cap and the Si0.8Ge0.2-channel. The valence band discontinuity (ΔEv) at the Si/Si0.8Ge0.2 heterointerface has been extracted from the carrier confinement characteristics of the quantum well. Capacitance-voltage (C-V) profiling has been used to measure the apparent doping profile and thickness of the unconsumed Si-cap layer. Fowler-Nordheim (F-N) constant current stressing shows that NO-plasma grown oxides have an improved charge trapping behavior over the O2-plasma grown oxides.

AB - Ultra-thin oxides (<100 angstroms) have been grown on strained Si/Si1-xGex/Si layers at a low temperature using microwave O2- and NO-plasma. Metal-oxide-semiconductor (MOS) capacitors fabricated using these oxides have been used for the determination of the hole density in the Si-cap and the Si0.8Ge0.2-channel. The valence band discontinuity (ΔEv) at the Si/Si0.8Ge0.2 heterointerface has been extracted from the carrier confinement characteristics of the quantum well. Capacitance-voltage (C-V) profiling has been used to measure the apparent doping profile and thickness of the unconsumed Si-cap layer. Fowler-Nordheim (F-N) constant current stressing shows that NO-plasma grown oxides have an improved charge trapping behavior over the O2-plasma grown oxides.

UR - https://www.scopus.com/pages/publications/0033727705

U2 - 10.1016/S0038-1101(99)00327-5

DO - 10.1016/S0038-1101(99)00327-5

M3 - 文章

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JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 6

ER -

Electrical characterization of Si/Si_1-xGe_x/Si quantum well heterostructures using a MOS capacitor

Abstract

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