Electrical degradation behavior of a-InGaZnO thin-film transistors with Sm2O3 gate dielectrics

Fa Hsyang Chen, Jian Hung Liu, Somnath Mondal, Bang Li Wu, Tung Ming Pan*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigate the electrical degradation behavior in amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) with Sm2O3, gate dielectrics. The negative shift of threshold voltage in Sm2O 3 a-IGZO TFTs can be attributed to the generation of extra electrons from oxygen vacancies in the a-IGZO channel.

Original languageEnglish
Title of host publicationSociety for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages399-400
Number of pages2
StatePublished - 2012
Event19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
Duration: 04 12 201207 12 2012

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Conference

Conference19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
Country/TerritoryJapan
CityKyoto
Period04/12/1207/12/12

Keywords

  • A-InGaZnO
  • Reliability
  • SmO
  • TFT

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