@inproceedings{09f416a7d1d24bafadff1efd7925e047,
title = "Electrical degradation behavior of a-InGaZnO thin-film transistors with Sm2O3 gate dielectrics",
abstract = "We investigate the electrical degradation behavior in amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) with Sm2O3, gate dielectrics. The negative shift of threshold voltage in Sm2O 3 a-IGZO TFTs can be attributed to the generation of extra electrons from oxygen vacancies in the a-IGZO channel.",
keywords = "A-InGaZnO, Reliability, SmO, TFT",
author = "Chen, {Fa Hsyang} and Liu, {Jian Hung} and Somnath Mondal and Wu, {Bang Li} and Pan, {Tung Ming}",
year = "2012",
language = "英语",
isbn = "9781627486521",
series = "Proceedings of the International Display Workshops",
pages = "399--400",
booktitle = "Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012",
note = "19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 ; Conference date: 04-12-2012 Through 07-12-2012",
}