Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination

Bo Li; Jinpei Lin; Linfei Gao; Zhengweng Ma; Huakai Yang; Zhihao Wu; Hsien Chin Chiu; Hao Chung Kuo; Chunfu Zhang; Zhihong Liu; Shuangwu Huang; Wei He; Xinke Liu

doi:10.1016/j.chip.2024.100105

Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination

Bo Li, Jinpei Lin, Linfei Gao, Zhengweng Ma, Huakai Yang, Zhihao Wu, Hsien Chin Chiu, Hao Chung Kuo, Chunfu Zhang, Zhihong Liu, Shuangwu Huang, Wei He, Xinke Liu^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

In this study, a gallium nitride (GaN) substrate and its 15 μm epitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy (HVPE) technique. To enhance the breakdown voltage (V_BR) of vertical GaN-on-GaN Schottky barrier diodes (SBDs), a dual ion coimplantation of carbon and helium was employed to create the edge termination. The resulting devices exhibited a low turn-on voltage of 0.55 V, a high I_on/I_off ratio of approximately 10⁹, and a low specific on-resistance of 1.93 mΩ cm². When the ion implantation edge was terminated, the maximum V_BR of the devices reached 1575 V, with an average improvement of 126%. These devices demonstrated a high figure of merit (FOM) of 1.28 GW cm^–2 and showed excellent reliability during pulse stress testing.

Original language	English
Article number	100105
Journal	Chip
Volume	3
Issue number	3
DOIs	https://doi.org/10.1016/j.chip.2024.100105
State	Published - 09 2024

Bibliographical note

Publisher Copyright:
© 2024 The Author(s)

Keywords

Device reliability
Dual ion co-implantation
HVPE
Leakage mechanism
Vertical GaN SBD

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10.1016/j.chip.2024.100105

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@article{3223f1157505453685902051fd50a20d,

title = "Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination",

abstract = "In this study, a gallium nitride (GaN) substrate and its 15 μm epitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy (HVPE) technique. To enhance the breakdown voltage (VBR) of vertical GaN-on-GaN Schottky barrier diodes (SBDs), a dual ion coimplantation of carbon and helium was employed to create the edge termination. The resulting devices exhibited a low turn-on voltage of 0.55 V, a high Ion/Ioff ratio of approximately 109, and a low specific on-resistance of 1.93 mΩ cm2. When the ion implantation edge was terminated, the maximum VBR of the devices reached 1575 V, with an average improvement of 126\%. These devices demonstrated a high figure of merit (FOM) of 1.28 GW cm–2 and showed excellent reliability during pulse stress testing.",

keywords = "Device reliability, Dual ion co-implantation, HVPE, Leakage mechanism, Vertical GaN SBD",

author = "Bo Li and Jinpei Lin and Linfei Gao and Zhengweng Ma and Huakai Yang and Zhihao Wu and Chiu, \{Hsien Chin\} and Kuo, \{Hao Chung\} and Chunfu Zhang and Zhihong Liu and Shuangwu Huang and Wei He and Xinke Liu",

note = "Publisher Copyright: {\textcopyright} 2024 The Author(s)",

year = "2024",

month = sep,

doi = "10.1016/j.chip.2024.100105",

language = "英语",

volume = "3",

journal = "Chip",

issn = "2709-4723",

number = "3",

}

TY - JOUR

T1 - Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination

AU - Li, Bo

AU - Lin, Jinpei

AU - Gao, Linfei

AU - Ma, Zhengweng

AU - Yang, Huakai

AU - Wu, Zhihao

AU - Chiu, Hsien Chin

AU - Kuo, Hao Chung

AU - Zhang, Chunfu

AU - Liu, Zhihong

AU - Huang, Shuangwu

AU - He, Wei

AU - Liu, Xinke

PY - 2024/9

Y1 - 2024/9

N2 - In this study, a gallium nitride (GaN) substrate and its 15 μm epitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy (HVPE) technique. To enhance the breakdown voltage (VBR) of vertical GaN-on-GaN Schottky barrier diodes (SBDs), a dual ion coimplantation of carbon and helium was employed to create the edge termination. The resulting devices exhibited a low turn-on voltage of 0.55 V, a high Ion/Ioff ratio of approximately 109, and a low specific on-resistance of 1.93 mΩ cm2. When the ion implantation edge was terminated, the maximum VBR of the devices reached 1575 V, with an average improvement of 126%. These devices demonstrated a high figure of merit (FOM) of 1.28 GW cm–2 and showed excellent reliability during pulse stress testing.

AB - In this study, a gallium nitride (GaN) substrate and its 15 μm epitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy (HVPE) technique. To enhance the breakdown voltage (VBR) of vertical GaN-on-GaN Schottky barrier diodes (SBDs), a dual ion coimplantation of carbon and helium was employed to create the edge termination. The resulting devices exhibited a low turn-on voltage of 0.55 V, a high Ion/Ioff ratio of approximately 109, and a low specific on-resistance of 1.93 mΩ cm2. When the ion implantation edge was terminated, the maximum VBR of the devices reached 1575 V, with an average improvement of 126%. These devices demonstrated a high figure of merit (FOM) of 1.28 GW cm–2 and showed excellent reliability during pulse stress testing.

KW - Device reliability

KW - Dual ion co-implantation

KW - HVPE

KW - Leakage mechanism

KW - Vertical GaN SBD

UR - https://www.scopus.com/pages/publications/85203634114

U2 - 10.1016/j.chip.2024.100105

DO - 10.1016/j.chip.2024.100105

M3 - 文章

AN - SCOPUS:85203634114

SN - 2709-4723

VL - 3

JO - Chip

JF - Chip

IS - 3

M1 - 100105

ER -

Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination

Abstract

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Keywords

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