Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; A. P. Zhang; F. Ren; S. J. Pearton; J. I. Chyi; T. E. Nee; C. C. Chou; C. M. Lee

doi:10.1007/s11664-001-0008-0

Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. P. Zhang, F. Ren, S. J. Pearton, J. I. Chyi, T. E. Nee, C. C. Chou, C. M. Lee

Research output: Contribution to journal › Journal Article › peer-review

Abstract

GaN p-i-n rectifiers with 4 μm thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defects present. Generally we find that i-layer background doping varies significantly (from <10¹⁴ cm^-3 to 2-3 × 10¹⁶ cm^-3), which influences the current conduction mechanism. The hole diffusion lengths were in the range 0.6-0.8 μm, while deep level concentrations were ∼10¹⁶ cm^-3.

Original language	English
Article number	3
Pages (from-to)	147-155
Number of pages	9
Journal	Journal of Electronic Materials
Volume	30
Issue number	3
DOIs	https://doi.org/10.1007/s11664-001-0008-0
State	Published - 03 2001
Externally published	Yes

Keywords

C-V measurements
DLTS
Deep centers
GaN
I-V measurements
P-i-n rectifiers

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10.1007/s11664-001-0008-0

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@article{515a8c5273184347ae7dee03b8260564,

title = "Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures",

abstract = "GaN p-i-n rectifiers with 4 μm thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defects present. Generally we find that i-layer background doping varies significantly (from <1014 cm-3 to 2-3 × 1016 cm-3), which influences the current conduction mechanism. The hole diffusion lengths were in the range 0.6-0.8 μm, while deep level concentrations were ∼1016 cm-3.",

keywords = "C-V measurements, DLTS, Deep centers, GaN, I-V measurements, P-i-n rectifiers",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Zhang, {A. P.} and F. Ren and Pearton, {S. J.} and Chyi, {J. I.} and Nee, {T. E.} and Chou, {C. C.} and Lee, {C. M.}",

year = "2001",

month = mar,

doi = "10.1007/s11664-001-0008-0",

language = "英语",

volume = "30",

pages = "147--155",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "3",

}

TY - JOUR

T1 - Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Zhang, A. P.

AU - Ren, F.

AU - Pearton, S. J.

AU - Chyi, J. I.

AU - Nee, T. E.

AU - Chou, C. C.

AU - Lee, C. M.

PY - 2001/3

Y1 - 2001/3

N2 - GaN p-i-n rectifiers with 4 μm thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defects present. Generally we find that i-layer background doping varies significantly (from <1014 cm-3 to 2-3 × 1016 cm-3), which influences the current conduction mechanism. The hole diffusion lengths were in the range 0.6-0.8 μm, while deep level concentrations were ∼1016 cm-3.

AB - GaN p-i-n rectifiers with 4 μm thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defects present. Generally we find that i-layer background doping varies significantly (from <1014 cm-3 to 2-3 × 1016 cm-3), which influences the current conduction mechanism. The hole diffusion lengths were in the range 0.6-0.8 μm, while deep level concentrations were ∼1016 cm-3.

KW - C-V measurements

KW - DLTS

KW - Deep centers

KW - GaN

KW - I-V measurements

KW - P-i-n rectifiers

UR - http://www.scopus.com/inward/record.url?scp=0035274791&partnerID=8YFLogxK

U2 - 10.1007/s11664-001-0008-0

DO - 10.1007/s11664-001-0008-0

M3 - 文章

AN - SCOPUS:0035274791

SN - 0361-5235

VL - 30

SP - 147

EP - 155

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 3

M1 - 3

ER -

Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures

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Keywords

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