Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; A. P. Zhang; F. Ren; S. J. Pearton; J. I. Chyi; T. E. Nee; C. C. Chou; C. M. Lee

doi:10.1007/s11664-001-0008-0

Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures

A. Y. Polyakov
, N. B. Smirnov
, A. V. Govorkov
, A. P. Zhang
, F. Ren
, S. J. Pearton
, J. I. Chyi
, T. E. Nee
, C. C. Chou
, C. M. Lee

Research output: Contribution to journal › Journal Article › peer-review

Abstract

GaN p-i-n rectifiers with 4 μm thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defects present. Generally we find that i-layer background doping varies significantly (from <10¹⁴ cm^-3 to 2-3 × 10¹⁶ cm^-3), which influences the current conduction mechanism. The hole diffusion lengths were in the range 0.6-0.8 μm, while deep level concentrations were ∼10¹⁶ cm^-3.

Original language	English
Article number	3
Pages (from-to)	147-155
Number of pages	9
Journal	Journal of Electronic Materials
Volume	30
Issue number	3
DOIs	https://doi.org/10.1007/s11664-001-0008-0
State	Published - 03 2001
Externally published	Yes

Keywords

C-V measurements
DLTS
Deep centers
GaN
I-V measurements
P-i-n rectifiers

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10.1007/s11664-001-0008-0

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@article{515a8c5273184347ae7dee03b8260564,

title = "Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures",

abstract = "GaN p-i-n rectifiers with 4 μm thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defects present. Generally we find that i-layer background doping varies significantly (from <1014 cm-3 to 2-3 × 1016 cm-3), which influences the current conduction mechanism. The hole diffusion lengths were in the range 0.6-0.8 μm, while deep level concentrations were ∼1016 cm-3.",

keywords = "C-V measurements, DLTS, Deep centers, GaN, I-V measurements, P-i-n rectifiers",

author = "Polyakov, \{A. Y.\} and Smirnov, \{N. B.\} and Govorkov, \{A. V.\} and Zhang, \{A. P.\} and F. Ren and Pearton, \{S. J.\} and Chyi, \{J. I.\} and Nee, \{T. E.\} and Chou, \{C. C.\} and Lee, \{C. M.\}",

year = "2001",

month = mar,

doi = "10.1007/s11664-001-0008-0",

language = "英语",

volume = "30",

pages = "147--155",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "3",

}

TY - JOUR

T1 - Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Zhang, A. P.

AU - Ren, F.

AU - Pearton, S. J.

AU - Chyi, J. I.

AU - Nee, T. E.

AU - Chou, C. C.

AU - Lee, C. M.

PY - 2001/3

Y1 - 2001/3

N2 - GaN p-i-n rectifiers with 4 μm thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defects present. Generally we find that i-layer background doping varies significantly (from <1014 cm-3 to 2-3 × 1016 cm-3), which influences the current conduction mechanism. The hole diffusion lengths were in the range 0.6-0.8 μm, while deep level concentrations were ∼1016 cm-3.

AB - GaN p-i-n rectifiers with 4 μm thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defects present. Generally we find that i-layer background doping varies significantly (from <1014 cm-3 to 2-3 × 1016 cm-3), which influences the current conduction mechanism. The hole diffusion lengths were in the range 0.6-0.8 μm, while deep level concentrations were ∼1016 cm-3.

KW - C-V measurements

KW - DLTS

KW - Deep centers

KW - GaN

KW - I-V measurements

KW - P-i-n rectifiers

UR - https://www.scopus.com/pages/publications/0035274791

U2 - 10.1007/s11664-001-0008-0

DO - 10.1007/s11664-001-0008-0

M3 - 文章

AN - SCOPUS:0035274791

SN - 0361-5235

VL - 30

SP - 147

EP - 155

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 3

M1 - 3

ER -

Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures

Abstract

Keywords

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