Electrical properties of deposited ZrO2 films on ZnO/n-Si substrates

S. Chatterjee; S. K. Nandi; S. Maikap; S. K. Samanta; C. K. Maiti

doi:10.1088/0268-1242/18/2/305

Electrical properties of deposited ZrO₂ films on ZnO/n-Si substrates

S. Chatterjee^*, S. K. Nandi, S. Maikap, S. K. Samanta, C. K. Maiti

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

21 Scopus citations

Abstract

The electrical properties of microwave plasma deposited high dielectric constant (high-k) ZrO₂ films on rf-sputtered polycrystalline ZnO films on n-Si have been studied. Capacitance-voltage (C-V), conductance-voltage (G-V) and current-voltage (I-V) characteristics of metal insulator semiconductor (MIS) structures consisting of high-k ZrO₂/n-Si have been measured. The fixed oxide charge density (Q_f/q) and interface state density (D_it) are found to be 3.3 × 10¹¹ cm^-2 and 1.3 × 10¹² cm^-2 eV^-1, respectively. Charge trapping behaviour has also been studied under Fowler-Nordheim (FN) constant current stressing.

Original language	English
Pages (from-to)	92-96
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	18
Issue number	2
DOIs	https://doi.org/10.1088/0268-1242/18/2/305
State	Published - 02 2003
Externally published	Yes

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title = "Electrical properties of deposited ZrO2 films on ZnO/n-Si substrates",

abstract = "The electrical properties of microwave plasma deposited high dielectric constant (high-k) ZrO2 films on rf-sputtered polycrystalline ZnO films on n-Si have been studied. Capacitance-voltage (C-V), conductance-voltage (G-V) and current-voltage (I-V) characteristics of metal insulator semiconductor (MIS) structures consisting of high-k ZrO2/n-Si have been measured. The fixed oxide charge density (Qf/q) and interface state density (Dit) are found to be 3.3 × 1011 cm-2 and 1.3 × 1012 cm-2 eV-1, respectively. Charge trapping behaviour has also been studied under Fowler-Nordheim (FN) constant current stressing.",

author = "S. Chatterjee and Nandi, {S. K.} and S. Maikap and Samanta, {S. K.} and Maiti, {C. K.}",

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T1 - Electrical properties of deposited ZrO2 films on ZnO/n-Si substrates

AU - Chatterjee, S.

AU - Nandi, S. K.

AU - Maikap, S.

AU - Samanta, S. K.

AU - Maiti, C. K.

PY - 2003/2

Y1 - 2003/2

N2 - The electrical properties of microwave plasma deposited high dielectric constant (high-k) ZrO2 films on rf-sputtered polycrystalline ZnO films on n-Si have been studied. Capacitance-voltage (C-V), conductance-voltage (G-V) and current-voltage (I-V) characteristics of metal insulator semiconductor (MIS) structures consisting of high-k ZrO2/n-Si have been measured. The fixed oxide charge density (Qf/q) and interface state density (Dit) are found to be 3.3 × 1011 cm-2 and 1.3 × 1012 cm-2 eV-1, respectively. Charge trapping behaviour has also been studied under Fowler-Nordheim (FN) constant current stressing.

AB - The electrical properties of microwave plasma deposited high dielectric constant (high-k) ZrO2 films on rf-sputtered polycrystalline ZnO films on n-Si have been studied. Capacitance-voltage (C-V), conductance-voltage (G-V) and current-voltage (I-V) characteristics of metal insulator semiconductor (MIS) structures consisting of high-k ZrO2/n-Si have been measured. The fixed oxide charge density (Qf/q) and interface state density (Dit) are found to be 3.3 × 1011 cm-2 and 1.3 × 1012 cm-2 eV-1, respectively. Charge trapping behaviour has also been studied under Fowler-Nordheim (FN) constant current stressing.

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U2 - 10.1088/0268-1242/18/2/305

DO - 10.1088/0268-1242/18/2/305

M3 - 文章

AN - SCOPUS:0037320398

SN - 0268-1242

VL - 18

SP - 92

EP - 96

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 2

ER -

Electrical properties of deposited ZrO₂ films on ZnO/n-Si substrates

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