Electrical properties of O2/NO-plasma grown oxynitride films on partially strain compensated Si/Si1-x-yGexCy/Si heterolayers

S. Maikap; S. K. Ray; S. K. Banerjee; C. K. Maiti

doi:10.1088/0268-1242/16/3/307

Electrical properties of O₂/NO-plasma grown oxynitride films on partially strain compensated Si/Si_1-x-yGe_xC_y/Si heterolayers

S. Maikap^*
, S. K. Ray
, S. K. Banerjee
, C. K. Maiti

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

8 Scopus citations

Abstract

Ultra-thin (< 100 Å) gate quality oxynitride films have been grown on partially strain compensated Si/Si_1-x-yGe_xC_y/Si heterolayers at low temperature using microwave NO/O₂-, O₂/NO- and O₂/NO/O₂-plasma. The change in gate voltage (ΔV_G), flatband voltage (ΔV_FB) and normalized current (ΔI_g/I_g) during constant current stressing are studied using a metal-insulator-semiconductor structure. It is found that the charge trapping properties and charge to breakdown (Q_BD) under Fowler-Nordheim constant current stressing are significantly improved in O₂/NO-plasma grown oxynitride film compared to NO/O₂- and O₂/NO/O₂-plasma grown oxynitride films.

Original language	English
Pages (from-to)	160-163
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	16
Issue number	3
DOIs	https://doi.org/10.1088/0268-1242/16/3/307
State	Published - 03 2001
Externally published	Yes

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title = "Electrical properties of O2/NO-plasma grown oxynitride films on partially strain compensated Si/Si1-x-yGexCy/Si heterolayers",

abstract = "Ultra-thin (< 100 {\AA}) gate quality oxynitride films have been grown on partially strain compensated Si/Si1-x-yGexCy/Si heterolayers at low temperature using microwave NO/O2-, O2/NO- and O2/NO/O2-plasma. The change in gate voltage (ΔVG), flatband voltage (ΔVFB) and normalized current (ΔIg/Ig) during constant current stressing are studied using a metal-insulator-semiconductor structure. It is found that the charge trapping properties and charge to breakdown (QBD) under Fowler-Nordheim constant current stressing are significantly improved in O2/NO-plasma grown oxynitride film compared to NO/O2- and O2/NO/O2-plasma grown oxynitride films.",

author = "S. Maikap and Ray, \{S. K.\} and Banerjee, \{S. K.\} and Maiti, \{C. K.\}",

year = "2001",

month = mar,

doi = "10.1088/0268-1242/16/3/307",

language = "英语",

volume = "16",

pages = "160--163",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "3",

}

TY - JOUR

T1 - Electrical properties of O2/NO-plasma grown oxynitride films on partially strain compensated Si/Si1-x-yGexCy/Si heterolayers

AU - Maikap, S.

AU - Ray, S. K.

AU - Banerjee, S. K.

AU - Maiti, C. K.

PY - 2001/3

Y1 - 2001/3

N2 - Ultra-thin (< 100 Å) gate quality oxynitride films have been grown on partially strain compensated Si/Si1-x-yGexCy/Si heterolayers at low temperature using microwave NO/O2-, O2/NO- and O2/NO/O2-plasma. The change in gate voltage (ΔVG), flatband voltage (ΔVFB) and normalized current (ΔIg/Ig) during constant current stressing are studied using a metal-insulator-semiconductor structure. It is found that the charge trapping properties and charge to breakdown (QBD) under Fowler-Nordheim constant current stressing are significantly improved in O2/NO-plasma grown oxynitride film compared to NO/O2- and O2/NO/O2-plasma grown oxynitride films.

AB - Ultra-thin (< 100 Å) gate quality oxynitride films have been grown on partially strain compensated Si/Si1-x-yGexCy/Si heterolayers at low temperature using microwave NO/O2-, O2/NO- and O2/NO/O2-plasma. The change in gate voltage (ΔVG), flatband voltage (ΔVFB) and normalized current (ΔIg/Ig) during constant current stressing are studied using a metal-insulator-semiconductor structure. It is found that the charge trapping properties and charge to breakdown (QBD) under Fowler-Nordheim constant current stressing are significantly improved in O2/NO-plasma grown oxynitride film compared to NO/O2- and O2/NO/O2-plasma grown oxynitride films.

UR - https://www.scopus.com/pages/publications/0035281211

U2 - 10.1088/0268-1242/16/3/307

DO - 10.1088/0268-1242/16/3/307

M3 - 文章

AN - SCOPUS:0035281211

SN - 0268-1242

VL - 16

SP - 160

EP - 163

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 3

ER -

Electrical properties of O₂/NO-plasma grown oxynitride films on partially strain compensated Si/Si_1-x-yGe_xC_y/Si heterolayers

Abstract

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