Electrical properties of plasma-grown gate oxides on tensile-strained Si1-yCy alloy

R. Mahapatra; S. Maikap; G. S. Kar; S. K. Ray

doi:10.1049/el:20020541

Electrical properties of plasma-grown gate oxides on tensile-strained Si_1-yC_y alloy

R. Mahapatra
, S. Maikap
, G. S. Kar
, S. K. Ray^*

^*Corresponding author for this work

Indian Institute of Technology Kharagpur

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

Growth of gate-quality ultrathin (< 100 Å) oxides directly on tensile-strained Si_1-yC_y alloy layers has been investigated using microwave O₂-plasma discharge. The electrical properties of oxide grown on an Si_0.993C_0.007 layer have been studied using a metal-oxide-semiconductor structure. Fixed oxide charge density and mid-gap interface state density are found to be 2.5 × 10¹¹ cm^-2 and 2.0 × 10¹¹ cm^-2 eV^-1, respectively. Oxide film exhibits hole trapping behaviour under Fowler-Nordheim constant current stressing.

Original language	English
Pages (from-to)	1000-1001
Number of pages	2
Journal	Electronics Letters
Volume	38
Issue number	17
DOIs	https://doi.org/10.1049/el:20020541
State	Published - 15 08 2002
Externally published	Yes

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title = "Electrical properties of plasma-grown gate oxides on tensile-strained Si1-yCy alloy",

abstract = "Growth of gate-quality ultrathin (< 100 {\AA}) oxides directly on tensile-strained Si1-yCy alloy layers has been investigated using microwave O2-plasma discharge. The electrical properties of oxide grown on an Si0.993C0.007 layer have been studied using a metal-oxide-semiconductor structure. Fixed oxide charge density and mid-gap interface state density are found to be 2.5 × 1011 cm-2 and 2.0 × 1011 cm-2 eV-1, respectively. Oxide film exhibits hole trapping behaviour under Fowler-Nordheim constant current stressing.",

author = "R. Mahapatra and S. Maikap and Kar, \{G. S.\} and Ray, \{S. K.\}",

year = "2002",

month = aug,

day = "15",

doi = "10.1049/el:20020541",

language = "英语",

volume = "38",

pages = "1000--1001",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

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TY - JOUR

T1 - Electrical properties of plasma-grown gate oxides on tensile-strained Si1-yCy alloy

AU - Mahapatra, R.

AU - Maikap, S.

AU - Kar, G. S.

AU - Ray, S. K.

PY - 2002/8/15

Y1 - 2002/8/15

N2 - Growth of gate-quality ultrathin (< 100 Å) oxides directly on tensile-strained Si1-yCy alloy layers has been investigated using microwave O2-plasma discharge. The electrical properties of oxide grown on an Si0.993C0.007 layer have been studied using a metal-oxide-semiconductor structure. Fixed oxide charge density and mid-gap interface state density are found to be 2.5 × 1011 cm-2 and 2.0 × 1011 cm-2 eV-1, respectively. Oxide film exhibits hole trapping behaviour under Fowler-Nordheim constant current stressing.

AB - Growth of gate-quality ultrathin (< 100 Å) oxides directly on tensile-strained Si1-yCy alloy layers has been investigated using microwave O2-plasma discharge. The electrical properties of oxide grown on an Si0.993C0.007 layer have been studied using a metal-oxide-semiconductor structure. Fixed oxide charge density and mid-gap interface state density are found to be 2.5 × 1011 cm-2 and 2.0 × 1011 cm-2 eV-1, respectively. Oxide film exhibits hole trapping behaviour under Fowler-Nordheim constant current stressing.

UR - https://www.scopus.com/pages/publications/0037102064

U2 - 10.1049/el:20020541

DO - 10.1049/el:20020541

M3 - 文章

AN - SCOPUS:0037102064

SN - 0013-5194

VL - 38

SP - 1000

EP - 1001

JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -

Electrical properties of plasma-grown gate oxides on tensile-strained Si_1-yC_y alloy

Abstract

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